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EM620FV8B Series
Low Power, 256Kx8 SRAM
10
DATA RETENTION CHARACTERISTICS
NOTES
1. See the ISB1 measurement condition of data sheet page 5.
2. Typical value is measured at TA=25oC and not 100% tested.
Parameter
Symbol
Test Condition
Min
Typ2)
Max
Unit
VCC for Data Retention
VDR
ISB1 Test Condition
(Chip Disabled) 1)
1.5
-
3.6
V
Data Retention Current
IDR
VCC=1.5V, ISB1 Test Condition
(Chip Disabled) 1)
-
0.5
-
µA
Chip Deselect to Data Retention Time
tSDR
See data retention wave form
0
-
-
ns
Operation Recovery Time
tRDR
tRC
-
-
tSDR
tRDR
Data Retention Mode
CS1 > Vcc-0.2V
Vcc
3.0V
2.2V
VDR
CS1
GND
tSDR
tRDR
Data Retention Mode
Vcc
3.0V
CS2
VDR
0.4V
CS2 < 0.2V
DATA RETENTION WAVE FORM
GND