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PRELIMINARY
CY7C185D
Document #: 38-05466 Rev. *C
Page 4 of 10
Thermal Resistance[4]
Parameter
Description
Test Conditions
All-Packages
Unit
Θ
JA
Thermal Resistance
(Junction to Ambient)[4]
Still Air, soldered on a 3 × 4.5 inch, two-layer
printed circuit board
TBD
°C/W
Θ
JC
Thermal Resistance
(Junction to Case)[4]
TBD
°C/W
AC Test Loads and Waveforms
Switching Characteristics Over the Operating Range [6]
Parameter
Description
7C185D-10
7C185D-12
7C185D-15
Unit
Min.
Max.
Min.
Max.
Min.
Max.
Read Cycle
tpower
[5]
VCC(typical) to the first access
100
100
100
µs
tRC
Read Cycle Time
10
12
15
ns
tAA
Address to Data Valid
10
12
15
ns
tOHA
Data Hold from Address Change
3
3
3
ns
tACE1
CE1 LOW to Data Valid
10
12
15
ns
tACE2
CE2 HIGH to Data Valid
10
12
15
ns
tDOE
OE LOW to Data Valid
5
6
8
ns
tLZOE
OE LOW to Low Z
3
3
3
ns
tHZOE
OE HIGH to High Z[7]
56
7
ns
tLZCE1
CE1 LOW to Low Z
[8]
33
3
ns
tLZCE2
CE2 HIGH to Low Z
3
3
3
ns
tHZCE
CE1 HIGH to High Z
[7, 8]
CE2 LOW to High Z
56
7
ns
tPU
CE1 LOW to Power-Up
CE2 to HIGH to Power-Up
00
0
ns
tPD
CE1 HIGH to Power-Down
CE2 LOW to Power-Down
10
12
15
ns
Notes:
5. tPOWER gives the minimum amount of time that the power supply should be at typical VCC values until the first memory access can be performed.
6. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified
IOL/IOH and 30-pF load capacitance.
7. tHZOE, tHZCE, and tHZWE are specified with CL = 5 pF as in part (b) of AC Test Loads. Transition is measured ±200 mV from steady state voltage.
8. At any given temperature and voltage condition, tHZCE is less than tLZCE1 and tLZCE2 for any given device.
R1 481
Ω
3.0V
5V
OUTPUT
R1 481
Ω
R2
255
Ω
30 pF
GND
90%
90%
10%
≤ 3ns
≤ 3 ns
5V
OUTPUT
R2
255
Ω
5 pF
(b)
(c)
OUTPUT
1.73V
INCLUDING
JIG AND
SCOPE
INCLUDING
JIGAND
SCOPE
10%
Equivalent to:
THÉVENIN EQUIVALENT
ALL INPUT PULSES
167
Ω
* CAPACITIVE LOAD CONSISTS
OF ALL COMPONENTS OF THE
TEST ENVIRONMENT
30 pF*
OUTPUT
Z = 50
Ω
50
Ω
1.5V
(a)
10-ns Device
12, 15-ns Devices
High-Z characteristics:
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