CY7C1021CV26
Document #: 38-05589 Rev. *A
Page 4 of 9
AC Test Loads and Waveforms[6]
Switching Characteristics Over the Operating Range[7]
Parameter
Description
CY7C1021CV26-15
Unit
Min.
Max.
Read Cycle
tRC
Read Cycle Time
15
ns
tAA
Address to Data Valid
15
ns
tOHA
Data Hold from Address Change
3
ns
tACE
CE LOW to Data Valid
15
ns
tDOE
OE LOW to Data Valid
7
ns
tLZOE
OE LOW to Low-Z[8]
0
ns
tHZOE
OE HIGH to High-Z[8, 9]
7
ns
tLZCE
CE LOW to Low-Z[8]
3
ns
tHZCE
CE HIGH to High-Z[8, 9]
7
ns
tPU
[10]
CE LOW to Power-Up
0
ns
tPD
[10]
CE HIGH to Power-Down
15
ns
tDBE
Byte Enable to Data Valid
7
ns
tLZBE
Byte Enable to Low-Z
0
ns
tHZBE
Byte Disable to High-Z
7
ns
Write Cycle[11]
tWC
Write Cycle Time
15
ns
tSCE
CE LOW to Write End
10
ns
tAW
Address Set-Up to Write End
10
ns
tHA
Address Hold from Write End
0
ns
tSA
Address Set-Up to Write Start
0
ns
tPWE
WE Pulse Width
10
ns
tSD
Data Set-Up to Write End
8
ns
tHD
Data Hold from Write End
0
ns
Notes:
6. AC characteristics (except High-Z) are tested using the Thevenin load shown in Figure (a). High-Z characteristics are tested for all speeds using the test load
shown in Figure (c).
7. Test conditions assume signal transition time of 2.6 ns or less, timing reference levels of 1.3V, input pulse levels of 0 to 2.6V.
8. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device.
9. tHZOE, tHZBE, tHZCE, and tHZWE are specified with a load capacitance of 5 pF as in part (d) of AC Test Loads. Transition is measured ±500 mV from steady-state voltage.
10. This parameter is guaranteed by design and is not tested.
11. The internal Write time of the memory is defined by the overlap of CE LOW, WE LOW and BHE/BLE LOW. CE, WE and BHE/BLE must be LOW to initiate a Write,
and the transition of these signals can terminate the Write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the Write.
2.6 V
OUTPUT
R2
30 pF
INCLUDING
JIG AND
SCOPE
R1
1830
Ω
1976
Ω
2.6V
OUTPUT
5 pF
R 317
Ω
R2
351
Ω
High-Z characteristics:
90%
10%
2.6V
GND
90%
10%
ALL INPUT PULSES
Rise Time: 1 V/ns
Fall Time: 1 V/ns
(c)
(b)
(a)
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