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CY7C1049CV33-12ZXI Datasheet(PDF) 5 Page - Cypress Semiconductor

Part # CY7C1049CV33-12ZXI
Description  4-Mbit (512K x 8) Static RAM
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY7C1049CV33-12ZXI Datasheet(HTML) 5 Page - Cypress Semiconductor

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CY7C1049CV33
Document #: 38-05006 Rev. *E
Page 5 of 11
AC Switching Characteristics Over the Operating Range [6]
Parameter
Description
-8
-10
-12
Unit
Min.
Max.
Min.
Max.
Min.
Max.
Read Cycle
tpower
[7]
VCC(typical) to the first access
1
11
µs
tRC
Read Cycle Time
8
10
12
ns
tAA
Address to Data Valid
810
12
ns
tOHA
Data Hold from Address Change
3
33
ns
tACE
CE LOW to Data Valid
810
12
ns
tDOE
OE LOW to Data Valid
45
6
ns
tLZOE
OE LOW to Low-Z
0
00
ns
tHZOE
OE HIGH to High-Z[8, 9]
45
6
ns
tLZCE
CE LOW to Low-Z[9]
3
33
ns
tHZCE
CE HIGH to High-Z[8, 9]
45
6
ns
tPU
CE LOW to Power-up
0
00
ns
tPD
CE HIGH to Power-down
810
12
ns
Write Cycle[10, 11]
tWC
Write Cycle Time
8
10
12
ns
tSCE
CE LOW to Write End
6
78
ns
tAW
Address Set-up to Write End
6
78
ns
tHA
Address Hold from Write End
0
00
ns
tSA
Address Set-up to Write Start
0
00
ns
tPWE
WE Pulse Width
6
78
ns
tSD
Data Set-up to Write End
4
56
ns
tHD
Data Hold from Write End
0
00
ns
tLZWE
WE HIGH to Low-Z[9]
3
33
ns
tHZWE
WE LOW to High-Z[8, 9]
45
6
ns
Shaded areas contain advance information.
AC Switching Characteristics Over the Operating Range [6]
Parameter
Description
-15
-20
Unit
Min.
Max.
Min.
Max.
Read Cycle
tpower
[7]
VCC(typical) to the first access
1
1
µs
tRC
Read Cycle Time
15
20
ns
tAA
Address to Data Valid
15
20
ns
tOHA
Data Hold from Address Change
3
3
ns
tACE
CE LOW to Data Valid
15
20
ns
tDOE
OE LOW to Data Valid
7
8
ns
Notes:
6. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V.
7. tPOWER gives the minimum amount of time that the power supply should be at stable, typical VCC values until the first memory access can be performed.
8. tHZOE, tHZCE, and tHZWE are specified with a load capacitance of 5 pF as in part (d) of AC Test Loads. Transition is measured ±500 mV from steady-state voltage.
9. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device.
10. The internal Write time of the memory is defined by the overlap of CE LOW, and WE LOW. CE and WE must be LOW to initiate a Write, and the transition of either
of these signals can terminate the Write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the Write.
11. The minimum Write cycle time for Write Cycle No. 3 (WE controlled, OE LOW) is the sum of tHZWE and tSD.


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