4 / 11 page
CY7C1049CV33
Document #: 38-05006 Rev. *E
Page 4 of 11
AC Test Loads and Waveforms[5]
Notes:
4. Tested initially and after any design or process changes that may affect these parameters.
5. AC characteristics (except High-Z) for all 8-ns and 10-ns parts are tested using the load conditions shown in Figure (a). All other speeds are tested using the
Thevenin load shown in Figure (b). High-Z characteristics are tested for all speeds using the test load shown in Figure (d).
ISB1
Automatic CE
Power-down Current
—TTL Inputs
Max. VCC, CE > VIH;
VIN > VIH or
VIN < VIL, f = fMAX
Com’l / Ind’l
40
40
mA
Automotive
45
-
mA
ISB2
Automatic CE
Power-down Current
—CMOS Inputs
Max. VCC,
CE > VCC – 0.3V,
VIN > VCC – 0.3V,
or VIN < 0.3V, f = 0
Com’l/Ind’l
10
10
mA
Automotive
15
-
mA
Thermal Resistance[4]
Parameter
Description
Test Conditions
36-pin SOJ
(Non Pb-Free)
36-pin SOJ
(Pb-Free)
44-TSOP-II
(Non Pb-Free)
44-TSOP-II
(Pb-Free)
Unit
Θ
JA
Thermal Resistance
(Junction to Ambient)
Test conditions follow
standard test methods
and procedures for
measuring thermal
impedance, per EIA /
JESD51.
46.51
46.51
41.66
41.66
°C/W
Θ
JC
Thermal Resistance
(Junction to Case)
18.8
18.8
10.56
10.56
°C/W
Capacitance[4]
Parameter
Description
Test Conditions
Max.
Unit
CIN
Input Capacitance
TA = 25°C, f = 1 MHz,
VCC = 3.3V
8pF
COUT
I/O Capacitance
8
pF
Electrical Characteristics Over the Operating Range (continued)
Parameter
Description
Test Conditions
-15
-20
Unit
Min.
Max.
Min.
Max.
90%
10%
3.0V
GND
90%
10%
ALL INPUT PULSES
3.3V
OUTPUT
30 pF
* CAPACITIVE LOAD CONSISTS
OF ALL COMPONENTS OF THE
TEST ENVIRONMENT
(b)
R 317
Ω
R2
351
Ω
Rise Time: 1 V/ns
Fall Time: 1 V/ns
30 pF*
OUTPUT
Z = 50
Ω
50
Ω
1.5V
(c)
(a)
3.3V
OUTPUT
5 pF
(d)
R 317
Ω
R2
351
Ω
8-, 10-ns devices:
12-, 15-, 20-ns devices:
High-Z characteristics: