3SK324 datasheet(2/8 Pages) RENESAS

Part #	3SK324

Description	Si Nch Dual Gate MOS FET UHF RF LOW NOISE Amplifier

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Manufacturer	RENESAS [Renesas Technology Corp]

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2 / 8 page

3SK324

Rev.1.00, May 18,2005, page 2 of 7

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown voltage

V(BR)DSS

6

—

V

ID = 200

µA, VG1S = VG2S = 0

Gate1 to source breakdown voltage

V(BR)G1SS

±6

—

V

IG1 =

±10 µA, VG2S = VDS = 0

Gate2 to source breakdown voltage

V(BR)G2SS

±6

—

V

IG2 =

±10 µA, VG1S = VDS = 0

Gate1 to source cutoff current

IG1SS

—

±100

nA

VG1S =

±5 V, VG2S = VDS = 0

Gate2 to source cutoff current

IG2SS

—

±100

nA

VG2S =

±5 V, VG1S = VDS = 0

Gate1 to source cutoff voltage

VG1S(off)

0

0.5

1

V

VDS = 5 V, VG2S = 3V, ID = 100

µA

Gate2 to source cutoff voltage

VG2S(off)

0.3

0.7

1.1

V

VDS = 5 V, VG1S = 3 V, ID = 100

µA

Forward transfer admittance

|yfs|

30

42

—

mS

VDS = 3.5 V, ID = 10 mA,

VG2S = 3 V, f = 1 kHz

Power gain

PG

20

24

—

dB

Noise figure

NF

—

1.0

1.6

dB

VDS = 3.5 V, ID = 10 mA,

VG2S = 3 V, f = 900 MHz

900MHz PG, NF Test Circuit

Input

(50

Ω)

Output

(50

Ω)

C2

C1

L1

L2

L3

L4

S

G1

G2

R1

R2

C3

R3

RFC

C6

C5

C4

D

VG2

VG1

VD

C1, C2

C3

C4 to C6

R1

R2

R3

Variable Capacitor (10 pF MAX)

Disk Capacitor (1000 pF)

Air Capacitor (1000 pF)

47 k

Ω

47 k

Ω

4.7 k

Ω

:

26

L2:

18

L4:

29

L3:

(

φ1 mm Copper wire)

Unit : mm

RFC :

φ1mm Copper wire with enamel 4 turns inside dia 6 mm

21

L1:

10

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