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CY7C1399B-12VC Datasheet(PDF) 5 Page - Cypress Semiconductor

Part # CY7C1399B-12VC
Description  256K(32K x 8) Static RAM
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY7C1399B-12VC Datasheet(HTML) 5 Page - Cypress Semiconductor

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CY7C1399B
Document #: 38-05071 Rev. *D
Page 5 of 10
Switching Characteristics Over the Operating Range[6] (continued)
1399B-15
1399B-20
Parameter
Description
Min.
Max.
Min.
Max.
Unit
Read Cycle
tRC
Read Cycle Time
15
20
ns
tAA
Address to Data Valid
15
20
ns
tOHA
Data Hold from Address Change
3
3
ns
tACE
CE LOW to Data Valid
15
20
ns
tDOE
OE LOW to Data Valid
6
7
ns
tLZOE
OE LOW to Low Z[7]
0
0
ns
tHZOE
OE HIGH to High Z[7, 8]
6
6
ns
tLZCE
CE LOW to Low Z[7]
3
3
ns
tHZCE
CE HIGH to High Z[7, 8]
7
7
ns
tPU
CE LOW to Power-Up
0
0
ns
tPD
CE HIGH to Power-Down
15
20
ns
Write Cycle[9, 10]
tWC
Write Cycle Time
15
20
ns
tSCE
CE LOW to Write End
10
12
ns
tAW
Address Set-Up to Write End
10
12
ns
tHA
Address Hold from Write End
0
0
ns
tSA
Address Set-Up to Write Start
0
0
ns
tPWE
WE Pulse Width
10
12
ns
tSD
Data Set-Up to Write End
8
10
ns
tHD
Data Hold from Write End
0
0
ns
tHZWE
WE LOW to High Z[9]
7
7
ns
tLZWE
WE HIGH to Low Z[7]
3
3
ns
Data Retention Characteristics (Over the Operating Range - L version only)
Parameter
Description
Conditions
Min.
Max.
Unit
VDR
VCC for Data Retention
2.0
V
ICCDR
Data Retention Current
Com’l
VCC = VDR = 2.0V,
CE > VCC – 0.3V,
VIN > VCC – 0.3V or
VIN < 0.3V
0
20
µA
tCDR
Chip Deselect to Data
Retention Time
0
ns
tR
Operation Recovery Time
tRC
ns


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