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PRELIMINARY
CY7C1399D
Document #: 38-05467 Rev. *C
Page 6 of 10
Data Retention Characteristics (Over the Operating Range)
Parameter
Description
Conditions
Min.
Max.
Unit
VDR
VCC for Data Retention
2.0
V
ICCDR
Data Retention Current
Non-L, Com’l / Ind’l
VCC = VDR = 2.0V,
CE > VCC – 0.3V,
VIN > VCC – 0.3V or
VIN < 0.3V
3mA
L-Version Only
1.2
mA
tCDR
[5]
Chip Deselect to Data Retention Time
0
ns
tR
[12]
Operation Recovery Time
tRC
ns
Data Retention Waveform
Switching Waveforms
Read Cycle No. 1[13, 14]
Read Cycle No. 2[14, 15]
Notes:
12. Full device operation requires linear VCC ramp from VDR to VCC(min.) > 50 µs or stable at VCC(min.) > 50 µs.
13. Device is continuously selected. OE, CE = VIL.
14. WE is HIGH for read cycle.
15. Address valid prior to or coincident with CE transition LOW.
3.0V
3.0V
tCDR
VDR > 2V
DATA RETENTION MODE
tR
CE
VCC
ADDRESS
DATA OUT
PREVIOUS DATA VALID
DATA VALID
tRC
tAA
tOHA
50%
50%
DATA VALID
tRC
tACE
tDOE
tLZOE
tLZCE
tPU
DATA OUT
HIGH IMPEDANCE
IMPEDANCE
ICC
ISB
tHZOE
tHZCE
tPD
OE
CE
HIGH
VCC
SUPPLY
CURRENT
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