Electronic Components Datasheet Search |
|
ADG1219BRJZ-REEL7 Datasheet(PDF) 1 Page - Analog Devices |
|
ADG1219BRJZ-REEL7 Datasheet(HTML) 1 Page - Analog Devices |
1 / 17 page Low Capacitance, Low Charge Injection, ±15 V/12 V iCMOS™ SPDT in SOT-23 Preliminary Technical Data ADG1219 Rev. PrB Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibilityis assumedbyAnalogDevicesforitsuse,norforanyinfringements of patents or other rightsofthirdpartiesthatmayresultfromitsuse.Specificationssubjecttochangewithoutnotice.No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarksandregisteredtrademarksarethepropertyoftheirrespectiveowners. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.461.3113 ©200 8 Analog Devices, Inc. All rights reserved. FEATURES <0.5 pC charge injection over full signal range 2.5 pF off capacitance Low leakage; 0.6 nA maximum @ 85°C 120 Ω on resistance Fully specified at +12 V, ±15 V No VL supply required 3 V logic-compatible inputs Rail-to-rail operation 8-lead SOT-23 package APPLICATIONS Automatic test equipment Data acquisition systems Battery-powered systems Sample-and-hold systems Audio/video signal routing Communication systems FUNCTIONAL BLOCK DIAGRAM ADG1219 DECODER SA IN EN SB D SWITCHES SHOWN FOR A LOGIC “0” INPUT Figure 1. GENERAL DESCRIPTION The ADG1219 is a monolithic iCMOS device containing an SPDT switch. An EN input is used to enable or disable the device. When disabled, all channels are switched off. When on, each channel conducts equally well in both directions and has an input signal range that extends to the supplies. Each switch exhibits break-before-make switching action. The iCMOS (industrial CMOS) modular manufacturing process combines high voltage CMOS (complementary metal- oxide semiconductor) and bipolar technologies. It enables the development of a wide range of high performance analog ICs capable of 33 V operation in a footprint that no other generation of high voltage parts has been able to achieve. Unlike analog ICs using conventional CMOS processes, iCMOS components can tolerate high supply voltages while providing increased perfor- mance, dramatically lower power consumption, and reduced package size. The ultralow capacitance and exceptionally low charge injection of these multiplexers make them ideal solutions for data acquisition and sample-and-hold applications, where low glitch and fast settling are required. Figure 2 shows that there is minimum charge injection over the entire signal range of the device. iCMOS construction also ensures ultralow power dissipation, making the parts ideally suited for portable and battery-powered instruments. 0.5 –0.5 –15 15 INPUT VOLTAGE (V) 0.4 0.3 0.2 0.1 0 –0.1 –0.2 –0.3 –0.4 –10 –5 0 5 10 TA = 25ºC VDD = +15V VSS = –15V VDD = +5V VSS = –5V VDD = 12V VSS = 0V Figure 2. Charge Injection vs. Input Voltage |
Similar Part No. - ADG1219BRJZ-REEL7 |
|
Similar Description - ADG1219BRJZ-REEL7 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |