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ADG1219BRJZ-REEL7 Datasheet(PDF) 1 Page - Analog Devices

Part # ADG1219BRJZ-REEL7
Description  Low Capacitance, Low Charge Injection, 짹15 V/12 V iCMOS??SPDT in SOT-23
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Manufacturer  AD [Analog Devices]
Direct Link  http://www.analog.com
Logo AD - Analog Devices

ADG1219BRJZ-REEL7 Datasheet(HTML) 1 Page - Analog Devices

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Low Capacitance, Low Charge Injection,
±15 V/12 V iCMOS™ SPDT in SOT-23
Preliminary Technical Data
ADG1219
Rev.
PrB
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibilityis assumedbyAnalogDevicesforitsuse,norforanyinfringements of patents or other
rightsofthirdpartiesthatmayresultfromitsuse.Specificationssubjecttochangewithoutnotice.No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarksandregisteredtrademarksarethepropertyoftheirrespectiveowners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
www.analog.com
Fax: 781.461.3113
©200
8 Analog Devices, Inc. All rights reserved.
FEATURES
<0.5 pC charge injection over full signal range
2.5 pF off capacitance
Low leakage; 0.6 nA maximum @ 85°C
120 Ω on resistance
Fully specified at +12 V, ±15 V
No VL supply required
3 V logic-compatible inputs
Rail-to-rail operation
8-lead SOT-23 package
APPLICATIONS
Automatic test equipment
Data acquisition systems
Battery-powered systems
Sample-and-hold systems
Audio/video signal routing
Communication systems
FUNCTIONAL BLOCK DIAGRAM
ADG1219
DECODER
SA
IN
EN
SB
D
SWITCHES SHOWN FOR A LOGIC “0” INPUT
Figure 1.
GENERAL DESCRIPTION
The ADG1219 is a monolithic iCMOS device containing an
SPDT switch. An EN input is used to enable or disable the
device. When disabled, all channels are switched off. When on,
each channel conducts equally well in both directions and has
an input signal range that extends to the supplies. Each switch
exhibits break-before-make switching action.
The iCMOS (industrial CMOS) modular manufacturing
process combines high voltage CMOS (complementary metal-
oxide semiconductor) and bipolar technologies. It enables the
development of a wide range of high performance analog ICs
capable of 33 V operation in a footprint that no other generation
of high voltage parts has been able to achieve. Unlike analog ICs
using conventional CMOS processes, iCMOS components can
tolerate high supply voltages while providing increased perfor-
mance, dramatically lower power consumption, and reduced
package size.
The ultralow capacitance and exceptionally low charge injection
of these multiplexers make them ideal solutions for data
acquisition and sample-and-hold applications, where low glitch
and fast settling are required. Figure 2 shows that there is
minimum charge injection over the entire signal range of the
device. iCMOS construction also ensures ultralow power
dissipation, making the parts ideally suited for portable and
battery-powered instruments.
0.5
–0.5
–15
15
INPUT VOLTAGE (V)
0.4
0.3
0.2
0.1
0
–0.1
–0.2
–0.3
–0.4
–10
–5
0
5
10
TA = 25ºC
VDD = +15V
VSS = –15V
VDD = +5V
VSS = –5V
VDD = 12V
VSS = 0V
Figure 2. Charge Injection vs. Input Voltage


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