MRF5S4125NR1 datasheet(6/15 Pages) FREESCALE

Part #	MRF5S4125NR1

Description	N-Channel Enhancement-Mode Lateral MOSFETs

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Manufacturer	FREESCALE [Freescale Semiconductor, Inc]

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RF Device Data

Freescale Semiconductor

MRF5S4125NR1 MRF5S4125NBR1

TYPICAL CHARACTERISTICS

Figure 7. Intermodulation Distortion Products

versus Output Power

Pout, OUTPUT POWER (WATTS) PEP

−70

−10

1

100

−40

−50

10

−30

−20

7th Order

5th Order

3rd Order

Figure 8. Intermodulation Distortion Products

versus Tone Spacing

10

TWO −TONE SPACING (MHz)

IM7 −L

−30

−40

−50

1

100

Figure 9. Pulsed CW Output Power versus

Input Power

36

59

25

Pin, INPUT POWER (dBm)

56

54

52

26

28

27

30

29

33

31

Actual

Ideal

P1dB = 51.16 dBm (130.62 W)

57

53

55

32

34

24

P6dB = 52.98 dBm (198.6 W)

Figure 10. Single-Carrier N-CDMA ACPR, ALT1, Power

Gain and Drain Efficiency versus Output Power

0−75

Pout, OUTPUT POWER (WATTS) AVG.

50

−25

25

−35

20

−40

15

−55

5

−70

110

−60

10

ηD

Gps

TC = −30_C

ACPR

50

P3dB = 52.26 dBm (168.27 W)

300

IM7 −U

IM5 −L

IM5 −U

IM3 −L

IM3 −U

−20

−10

35

51

30

35

40

45

−65

−50

−45

−30

25

_C

85

_C

VDD = 28 Vdc, IDQ = 1100 mA, f = 465 MHz

Single −Carrier N−CDMA

1.2288 MHz Channel Bandwidth, PAR = 9.8 dB

@ 0.01% Probability (CCDF)

49

−30

_C

−60

200

VDD = 28 Vdc

f1 = 465 MHz, f2 = 467.5 MHz

Two −Tone Measurements, 2.5 MHz Tone Spacing

−60

58

ALT1

85

_C

25

_C

−30

_C

85

_C

25

_C

VDD = 28 Vdc, Pout = 120 W (PEP)

IDQ = 1100 mA, Two−Tone Measurements

(f1 + f2)/2 = Center Frequency of 465 MHz

60

VDD = 28 Vdc, IDQ = 1100 mA

CW

f = 465 MHz

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MRF5S4125NR1 Datasheet(PDF) 6 Page - Freescale Semiconductor, Inc

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