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AP18P10GS Datasheet(PDF) 4 Page - Advanced Power Electronics Corp.

Part # AP18P10GS
Description  P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Manufacturer  A-POWER [Advanced Power Electronics Corp.]
Direct Link  http://www.a-power.com.tw
Logo A-POWER - Advanced Power Electronics Corp.

AP18P10GS Datasheet(HTML) 4 Page - Advanced Power Electronics Corp.

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Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4/4
AP18P10GS
Q
VG
-4.5V
QGS
QGD
QG
Charge
0
3
6
9
12
15
0
1020
3040
Q G , Total Gate Charge (nC)
V DS = - 80 V
I D = - 8 A
10
100
1000
10000
1
5
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
f=1.0MHz
C iss
C oss
C rss
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0
1
10
100
0.1
1
10
100
1000
-V DS , Drain-to-Source Voltage (V)
T C =25
o C
Single Pulse
100us
1ms
10ms
100ms
DC
0
2.5
5
7.5
10
12.5
15
02
46
-V GS , Gate-to-Source Voltage (V)
T j =150
o C
T j =25
o C
V DS = -5V


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