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CY62157DV30 MoBL®
Document #: 38-05392 Rev. *H
Page 4 of 12
Thermal Resistance[11]
Parameter
Description
Test Conditions
FBGA
TSOP II
TSOP I
Unit
Θ
JA
Thermal Resistance
(Junction to Ambient)
Still Air, soldered on a 3 × 4.5 inch,
four-layer printed circuit board
39.3
35.62
36.9
°C/W
Θ
JC
Thermal Resistance
(Junction to Case)
9.69
9.13
10.05
°C/W
AC Test Loads and Waveforms[13]
Parameters
2.50V
3.0V
Unit
R1
16667
1103
Ω
R2
15385
1554
Ω
RTH
8000
645
Ω
VTH
1.20
1.75
V
Data Retention Characteristics (Over the Operating Range)
Parameter
Description
Conditions
Min.
Typ.[2]
Max.
Unit
VDR
VCC for Data Retention
1.5
V
ICCDR
Data Retention Current
VCC= 1.5V
CE1 > VCC – 0.2V, CE2 < 0.2V,
VIN > VCC – 0.2V or VIN < 0.2V
Ind’l (L)
10
µA
Ind’l/Auto-A (LL)
4
Auto-E (L)
25
tCDR
[11]
Chip Deselect to Data
Retention Time
0ns
tR
[14]
Operation Recovery Time
tRC
ns
Data Retention Waveform[15]
Notes:
13. Test condition for the 45 ns part is a load capacitance of 30 pF.
14. Full device operation requires linear VCC ramp from VDR to VCC(min.) > 100 µs or stable at VCC(min.) > 100 µs.
VCC
VCC
OUTPUT
R2
30 pF / 50 pF
INCLUDING
JIG AND
SCOPE
GND
90%
10%
90%
10%
Rise Time = 1 V/ns
Fall Time = 1 V/ns
OUTPUT
V
Equivalent to: THEVENIN EQUIVALENT
ALL INPUT PULSES
RTH
R1
VCC, min.
VCC, min.
tCDR
VDR > 1.5 V
DATA RETENTION MODE
tR
CE1 or
VCC
BHE
.BLE
CE2
or
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