CYDM256A16, CYDM128A16,
CYDM064A16, CYDM128A08,
CYDM064A08
Document #: 38-06081 Rev. *F
Page 5 of 25
Functional Description
The
CYDM256A16,
CYDM128A16,
CYDM064A16,
CYDM128A08, CYDM064A08 are low-power CMOS 4K,
8K,16K x 16, and 8/16K x 8 dual-port static RAMs. Arbitration
schemes are included on the devices to handle situations
when multiple processors access the same piece of data. Two
ports are provided, permitting independent, asynchronous
access for reads and writes to any location in memory. The
devices can be utilized as standalone 16-bit dual-port static
RAMs or multiple devices can be combined in order to function
as a 32-bit or wider master/slave dual-port static RAM. An M/S
pin is provided for implementing 32-bit or wider memory appli-
cations without the need for separate master and slave
devices or additional discrete logic. Application areas include
interprocessor/multiprocessor
designs,
communications
status buffering, and dual-port video/graphics memory.
Each port has independent control pins: Chip Enable (CE),
Read or Write Enable (R/W), and Output Enable (OE). Two
flags are provided on each port (BUSY and INT). BUSY
signals that the port is trying to access the same location
currently being accessed by the other port. The Interrupt flag
(INT) permits communication between ports or systems by
means of a mail box. The semaphores are used to pass a flag,
or token, from one port to the other to indicate that a shared
resource is in use. The semaphore logic is comprised of eight
shared latches. Only one side can control the latch
(semaphore) at any time. Control of a semaphore indicates
that a shared resource is in use. An automatic power-down
feature is controlled independently on each port by a Chip
Enable (CE) pin.
The
CYDM256A16,
CYDM128A16,
CYDM064A16,
CYDM128A08, CYDM064A08 are available in 100-ball
0.5-mm Pitch Ball Grid Array (BGA) packages.
Power Supply
The core and I/O voltages will be 1.8V/2.5V LVCMOS/3.0V
LVTTL depending on the user's supply voltage. The supply
voltage controls both the Core and I/O voltages.
Write Operation
Data must be set up for a duration of tSD before the rising edge
of R/W in order to guarantee a valid write. A write operation is
controlled by either the R/W pin (see Write Cycle No. 1
waveform) or the CE pin (see Write Cycle No. 2 waveform).
Required inputs for non-contention operations are summa-
rized in Table 1.
If a location is being written to by one port and the opposite
port attempts to read that location, a port-to-port flowthrough
delay must occur before the data is read on the output;
otherwise the data read is not deterministic. Data will be valid
on the port tDDD after the data is presented on the other port.
Read Operation
When reading the device, the user must assert both the OE
and CE pins. Data will be available tACE after CE or tDOE after
OE is asserted. If the user wishes to access a semaphore flag,
then the SEM pin must be asserted instead of the CE pin, and
OE must also be asserted.
Interrupts
The upper two memory locations may be used for message
passing. The highest memory location (FFF for the
CYDM064A16, 1FFF for the CYDM128A16 and CYDM064A08,
Pin Definitions
Left Port
Right Port
Description
CEL
CER
Chip Enable
R/WL
R/WR
Read/Write Enable
OEL
OER
Output Enable
A0L–A13L
A0R–A13R
Address (A0–A11 for 4K devices; A0–A12 for 8K devices; A0–A13 for 16K devices).
I/O0L–I/O15L
I/O0R–I/O15R
Data Bus Input/Output for x16 devices; I/O0–I/O7 for x8 devices.
SEML
SEMR
Semaphore Enable
UBL
UBR
Upper Byte Select (I/O8–I/O15 for x16 devices; Not applicable for x8 devices).
LBL
LBR
Lower Byte Select (I/O0–I/O7 for x16 devices; Not applicable for x8 devices).
INTL
INTR
Interrupt Flag
BUSYL
BUSYR
Busy Flag
IRR0, IRR1
Input Read Register for CYDM064A16, CYDM064A08, CYDM128A16.
A13L, A13R for CYDM256A16 and CYDM128A08 devices.
ODR0-ODR4
Output Drive Register; These outputs are Open Drain.
SFEN
Special Function Enable
M/S
Master or Slave Select
VCC
Power
GND
Ground
NC
No Connect. Leave this pin Unconnected.
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