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PRELIMINARY
CYU01M16SCE
MoBL3™
Document #: 38-05601 Rev. *D
Page 2 of 11
Power-up Characteristics
The initialization sequence is shown in the figure below. Chip
Select should be CE1 HIGH or CE2 LOW for at least 200 µs
after VCC has reached a stable value. No access must be
attempted during this period of 200
µs.
Pin Configuration[2, 3]
48-Ball VFBGA
WE
A11
A10
A6
A0
A3
CE1
I/O10
I/O8
I/O9
A4
A5
I/O11
I/O13
I/O12
I/O14
I/O15
VSS
A9
A8
OE
VSS
A7
I/O0
BHE
CE2
A17
A2
A1
BLE
VCC
I/O2
I/O1
I/O3
I/O4
I/O5
I/O6
I/O7
A15
A14
A13
A
12
3
2
6
5
4
1
D
E
B
A
C
F
G
H
Top View
A16
NC
VCC
A18
NC
A
19
Product Portfolio[4]
Product
VCC Range (V)
Speed
(ns)
Power Dissipation
Operating ICC (mA)
Standby ISB2 (µA)
f = 1MHz
f = fmax
CYU01M16SCE
Min.
Typ.[4]
Max.
Typ.[4]
Max.
Typ.[4]
Max.
Typ.[4]
Max.
2.2
3.0
3.6
70
3
5
18
25
55
70
Parameter
Description
Min.
Typ.
Max.
Unit
Tpu
Chip Enable Low After Stable VCC
200
µs
Notes:
2. Ball H6 and E3 can be used to upgrade to a 32-Mbit and a 64-Mbit density, respectively.
3. NC “no connect” - not connected internally to the die.
4. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC (typ) and TA = 25°C. Tested initially
and after design changes that may affect the parameters.
Tpu
CE
VCC
First Access
Stable Power
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