LET21030C datasheet(1/4 Pages) STMICROELECTRONICS

Part #	LET21030C

Description	RF POWER TRANSISTORS Ldmos Enhanced Technology

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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TARGET DATA

January, 24 2003

LET21030C

RF POWER TRANSISTORS

Ldmos Enhanced Technology

Designed

for GSM / EDGE / IS-97 / WCDMA

applications

• EXCELLENT THERMAL STABILITY

• POUT = 30 W with 11 dB gain @ 2170 MHz

• BeO FREE PACKAGE

• INTERNAL INPUT MATCHING

• ESD PROTECTION

DESCRIPTION

The LET21030C is a common

source N-Channel

enhancement-mode lateral Field-Effect RF power

transistor designed for broadband commercial and

industrial applications at frequencies up to 2.1

GHz. The LET21030C is designed for high gain and

broadband performance operating in common

source mode at 26 V. Its internal matching makes

it ideal for base station applications requiring high

linearity.

PIN CONNECTION

1. Drain

2. Gate

3. Source

1

2

3

CASE 465E–03, STYLE 1

epoxy sealed

ORDER CODE

LET21030C

BRANDING

LET21030C

ABSOLUTE MAXIMUM RATINGS (TCASE = 25

°C)

Symbol

Parameter

Value

Unit

V(BR)DSS

Drain-Source Voltage

65

V

VGS

Gate-Source Voltage

-0.5 to +15

V

ID

Drain Current

4

A

PDISS

Power Dissipation (@ Tc = 70 °C)

65

W

Tj

Max. Operating Junction Temperature

200

°C

TSTG

Storage Temperature

-65 to +200

°C

THERMAL DATA

Rth(j-c)

Junction -Case Thermal Resistance

2

°C/W

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