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CYW180-53SXT Datasheet(PDF) 5 Page - Cypress Semiconductor

Part # CYW180-53SXT
Description  Peak Reducing EMI Solution
Download  10 Pages
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CYW180-53SXT Datasheet(HTML) 5 Page - Cypress Semiconductor

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W180
Document #: 38-07156 Rev. *B
Page 5 of 10
Absolute Maximum Ratings[1]
Stresses greater than those listed in this table may cause
permanent damage to the device. These represent a stress
rating only. Operation of the device at these or any other condi-
tions above those specified in the operating sections of this
specification is not implied. Maximum conditions for extended
periods may affect reliability.
.
Parameter
Description
Rating
Unit
VDD, VIN
Voltage on any pin with respect to GND
–0.5 to +7.0
V
TSTG
Storage Temperature
–65 to +150
°C
TA
Operating Temperature
0 to +70
°C
TB
Ambient Temperature under Bias
–55 to +125
°C
PD
Power Dissipation
0.5
W
DC Electrical Characteristics: 0°C < TA < 70°C, VDD = 3.3V ±5%
Parameter
Description
Test Condition
Min.
Typ.
Max.
Unit
IDD
Supply Current
18
32
mA
tON
Power Up Time
First locked clock cycle after Power
Good
5ms
VIL
Input Low Voltage
0.8
V
VIH
Input High Voltage
2.4
V
VOL
Output Low Voltage
0.4
V
VOH
Output High Voltage
2.4
V
IIL
Input Low Current
Note 2
–50
µA
IIH
Input High Current
Note 2
50
µA
IOL
Output Low Current
@ 0.4V, VDD = 3.3V
15
mA
IOH
Output High Current
@ 2.4V, VDD = 3.3V
15
mA
CI
Input Capacitance
7pF
RP
Input Pull-Up Resistor
500
k
ZOUT
Clock Output Impedance
25
Notes:
1. Single Power Supply: The voltage on any input or I/O pin cannot exceed the power pin during power-up.
2. Inputs FS2:1& SS% have a pull-up resistor; Input SSON# has a pull-down resistor.


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