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STX724 Datasheet(PDF) 3 Page - STMicroelectronics

Part No. STX724
Description  NPN MEDIUM POWER TRANSISTORS
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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STX724
2 Electrical Characteristics
3/9
2
Electrical Characteristics
Table 3.
Electrical Characteristics (TCASE = 25°C; unless otherwise specified)
1 Pulsed duration = 300
μs, duty cycle 1.5%.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICES
Collector Cut-off Current
(VBE = 0)
VCE = 60V
10
μA
ICEO
Collector Cut-off Current
(IB = 0)
VCE = 30V
100
μA
IEBO
Emitter Cut-off Current
(IC = 0)
VEB = 5V
10
μA
V(BR)CBO
Collector-Base
Breakdown Voltage (IE = 0)
IC = 100μA
60
V
V(BR)CEO
Note 1
Collector-Emitter Breakdown
Voltage (IB = 0)
IC = 10 mA
30
V
V(BR)EBO
Collector-Emitter Breakdown
Voltage (IC = 0)
IE = 100 μA
5V
VCE(sat)
Note 1
Collector-Emitter Saturation
Voltage
IC = 1 A
IB = 50 mA
IC = 2 A
IB = 100 mA
IC = 3 A
IB = 150 mA
0.4
0.7
1.1
V
V
V
VBE(sat)
Note 1
Base-Emitter Saturation Voltage IC = 2 A
IB = 100 mA
1.2
V
hFE
DC Current Gain
IC = 100 mA
VCE = 2 V
IC = 1 A
VCE = 2 V
IC = 3 A
VCE = 2 V
100
80
30
300
fT
Transistor Frequency
VCE = 10 V
Ic= 0.1 A
100
MHz




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