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GB30RF60K Datasheet(PDF) 9 Page - International Rectifier |
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GB30RF60K Datasheet(HTML) 9 Page - International Rectifier |
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9 / 14 page  GB30RF60K Bulletin I27303 01/07 Fig. 27 - Typ. Diode Forward Characteristics tp = 80μs Fig. 26 - Typical Gate Charge vs. VGE ICE = 15A Fig. 29 - Typ. Switching Time vs. IC TJ = 125°C; L=200μH; VCE= 300V,RG= 22Ω;VGE= 15V Fig. 28 - Typ. Energy Loss vs. IC TJ = 125°C; L=200μH; VCE= 300V,RG= 22Ω; VGE= 15V Fig. 31 - Typ. Switching Time vs. RG TJ = 125°C; L=200μH; VCE= 300V, ICE= 15A; VGE= 15V Fig. 30 - Typ. Energy Loss vs. RG TJ = 125°C; L=200μH; VCE= 300V, ICE= 15A; VGE= 15V Brake 0 0.5 1 1.5 2 0 5 10 15 20 25 30 Vf (V) Tj = 25°C Tj = 125°C Ic (A) 4 7 10 13 16 19 22 0.1 0.2 0.3 0.4 0.5 0.6 0.7 ETOT EON EOFF QG, Total Gate Charge (nC) 020 40 0 4 8 12 16 300V 0 102030 40 50 0.01 0.1 1 Rg ( Ω ) tF tdON tR tdOFF 10 14 18 22 0.01 0.1 1 Ic (A) tF tdOF F tdO N tR Rg ( Ω Ω Ω Ω Ω) 0 10 203040 50 0.1 0.2 0.3 0.4 0.5 0.6 E (OFF) E (ON) E (TOT) Document Number: 94479 www.vishay.com 9 |
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