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IRFL214PBF Datasheet(PDF) 2 Page - International Rectifier |
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IRFL214PBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 9 page  IRFL214PbF 2 www.irf.com RDS(on) Static Drain-to-Source On-Resistance ––– ––– 2.0 Ω VGS = 10V, ID = 0.47A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 0.50 ––– ––– S VDS = 50V, ID = 0.47 A ––– ––– 25 µA VDS = 250V, VGS = 0V ––– ––– 250 VDS = 200V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V Qg Total Gate Charge ––– ––– 8.2 ID = 2.7A Qgs Gate-to-Source Charge ––– ––– 1.8 nC VDS = 200V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 4.5 VGS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 7.0 ––– VDD = 125V tr Rise Time ––– 7.6 ––– ns ID = 2.7A td(off) Turn-Off Delay Time ––– 16 ––– RG = 24 Ω tf Fall Time ––– 7.0 ––– RD = 45 Ω, See Fig. 10 nH Ciss Input Capacitance ––– 140 ––– VGS = 0V Coss Output Capacitance ––– 42 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 9.6 ––– ƒ = 1.0MHz, See Fig. 5 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS IDSS Drain-to-Source Leakage Current Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD ≤ 2.7A, di/dt ≤ 65A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Notes: VDD=50V, starting TJ = 25°C, L =128 mH RG = 25Ω, IAS = 0.79. (See Figure 12) Pulse width ≤ 300µs; duty cycle ≤ 2%. Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 2.0 V TJ = 25°C, IS = 0.79A, VGS = 0V trr Reverse Recovery Time ––– 190 390 ns TJ = 25°C, IF = 2.7A Qrr Reverse RecoveryCharge ––– 0.64 1.3 µC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) ––– ––– ––– ––– 6.3 0.79 A S D G Between lead, 6mm(0.25in) from package and center of die contact. LS Internal Source Inductance Internal Drain Inductance LD ––– 4.0 ––– ––– 6.0 ––– ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.39 ––– V/°C Reference to 25°C, ID = 1mA V(BR)DSS Drain-to-Source Breakdown Voltage 250 ––– ––– V VGS = 0V, ID = 250µA Parameter Min. Typ. Max. Units Conditions Source-Drain Ratings and Characteristics |
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