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IRFP3077PBF Datasheet(PDF) 1 Page - International Rectifier |
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IRFP3077PBF Datasheet(HTML) 1 Page - International Rectifier |
1 / 8 page 3/3/08 Benefits l Worldwide Best RDS(on) in TO-247 l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability www.irf.com 1 HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits S D G GD S Gate Drain Source PD - 97126 IRFP3077PbF TO-247AC S D G D VDSS 75V RDS(on) typ. 2.8m: max. 3.3m: ID (Silicon Limited) 200A c ID (Package Limited) 120A Absolute Maximum Ratings Symbol Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Wire Bond Limited) IDM Pulsed Drain Current d PD @TC = 25°C Maximum Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V dV/dt Peak Diode Recovery f V/ns TJ Operating Junction and °C TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy e mJ IAR Avalanche Current c A EAR Repetitive Avalanche Energy g mJ Thermal Resistance Symbol Parameter Typ. Max. Units RθJC Junction-to-Case j ––– 0.44 RθCS Case-to-Sink, Flat Greased Surface 0.24 ––– °C/W RθJA Junction-to-Ambient j ––– 40 300 Max. 200 c 120 850 140 c 200 See Fig. 14, 15, 22a, 22b, 340 2.5 -55 to + 175 ± 20 2.3 10lb xin (1.1Nxm) |
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