M25PE40-VMN6TP datasheet(6/62 Pages) NUMONYX

Part #	M25PE40-VMN6TP

Description	4 Mbit, page-erasable serial Flash memory with byte alterability, 75 MHz SPI bus, standard pinout

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Manufacturer	NUMONYX [Numonyx B.V]

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Description

M25PE40

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Description

The M25PE40 is a 4 Mbit (512Kbit × 8 bit) serial paged Flash memory accessed by a high

speed SPI-compatible bus.

The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or

Page Program instruction. The Page Write instruction consists of an integrated Page Erase

cycle followed by a Page Program cycle.

The memory is organized as 8 sectors that are further divided up into 16 subsectors each

(128 subsectors in total). Each sector contains 256 pages and each subsector contains 16

pages. Each page is 256 bytes wide. Thus, the whole memory can be viewed as consisting

of 2048 pages, or 524,288 bytes.

The memory can be erased a page at a time, using the Page Erase instruction, a subsector

at a time, using the Subsector Erase instruction, a sector at a time, using the Sector Erase

instruction or as a whole, using the Bulk Erase (BE) instruction.

The memory can be write protected by either hardware or software using a mix of volatile

and non-volatile protection features, depending on the application needs. The protection

granularity is of 64 Kbytes (sector granularity).

Important note

This datasheet details the functionality of the devices, based on the previous T7X process or

based on the current T9HX process (available since July 2007). Delivery of parts operating

with a maximum clock rate of 75 MHz starts from week 8 of 2008.

What are the changes?

The M25PE40 in T9HX process offers the following additional features:

●

the whole memory array is partitioned into 4-Kbyte subsectors

●

five new instructions: Write Status Register (WRSR), Write to Lock Register (WRLR),

Read Lock Register (RDLR), 4-Kbyte Subsector Erase (SSE) and Bulk Erase (BE)

●

Status Register: 4 bits can be written (BP0, BP1, BP2, SRWD)

●

WP input (pin 3): write protection limits are extended, depending on the value of the

BP0, BP1, BP2, SRWD bits. The WP write protection remains the same if bits (BP2,

BP1, BP0) are set to (0, 0, 1)

●

smaller die size allowing assembly into an SO8N package.

Similar Part No. - M25PE40-VMN6TP

Manufacturer	Part #	Datasheet	Description
STMicroelectronics	M25PE40	482Kb / 60P	4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout
	M25PE40VMN6G	482Kb / 60P	4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout
	M25PE40VMN6P	482Kb / 60P	4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout
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	M25PE40VMN6TP	482Kb / 60P	4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout

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Similar Description - M25PE40-VMN6TP

Manufacturer	Part #	Datasheet	Description
Numonyx B.V	M25PE16	1Mb / 58P	16-Mbit, page-erasable serial flash memory with byte-alterability, 75 MHz SPI bus, standard pinout
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M25PE40-VMN6TP Datasheet(PDF) 6 Page - Numonyx B.V

M25PE40-VMN6TP Datasheet(HTML) 6 Page - Numonyx B.V

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