M29DW641F70N1T datasheet(1/80 Pages) NUMONYX

Part #	M29DW641F70N1T

Description	64 Mbit (4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory

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Manufacturer	NUMONYX [Numonyx B.V]

Direct Link	http://www.numonyx.com

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1 / 80 page

December 2007

Rev 5

1/80

1

M29DW641F

64 Mbit (4Mb x16, Multiple Bank, Page, Boot Block)

3V Supply Flash Memory

Features

■ Supply voltage

–VCC = 2.7V to 3.6V for Program, Erase and

Read

–VPP/WP=12V for Fast Program (optional)

■ Asynchronous Page Read mode

– Page Width 8 Words

– Page Access 25, 30ns

– Random Access: 60, 70ns

■ Programming Time

– 10µs per Word typical

– 4 Words at-a-time Program

■ Memory blocks

– Quadruple Bank Memory Array:

8Mbit+24Mbit+24Mbit+8Mbit

– Parameter Blocks (at Top and Bottom)

■ Dual Operations

– While Program or Erase in a group of

banks (from 1 to 3), Read in any of the

other banks

■ Program/Erase Suspend and Resume modes

– Read from any Block during Program

Suspend

– Read and Program another Block during

Erase Suspend

■ Unlock Bypass Program command

– Faster Production/Batch Programming

■ Common Flash Interface

– 64 bit Security Code

■ 100,000 Program/Erase cycles per block

■ Low power consumption

– Standby and Automatic Standby

■ Extended Memory Block

– Extra block used as security block or to

store additional information

■ Hardware Block Protection

–VPP/WP Pin for fast program and write

protect of the four outermost parameter

blocks

■ Software Block Protection

– Standard Protection

– Password Protection

■ Electronic Signature

– Manufacturer code: 0020h

– Device code: 227Eh + 2203h + 2200h

■ ECOPACK

® packages

FBGA

TSOP48 (N)

12 x 20mm

TFBGA48 (ZE)

6 x 8mm

www.numonyx.com

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M29DW641F70N1T Datasheet(PDF) 1 Page - Numonyx B.V

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