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M29W320EB70N1T Datasheet(PDF) 1 Page - Numonyx B.V |
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M29W320EB70N1T Datasheet(HTML) 1 Page - Numonyx B.V |
1 / 63 page March 2008 Rev 6 1/63 1 M29W320ET M29W320EB 32 Mbit (4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block) 3V supply Flash memory Features ■ Supply voltage –VCC = 2.7V to 3.6V for Program, Erase and Read –VPP =12V for Fast Program (optional) ■ Access times: 70, 90ns ■ Programming time – 10µs per byte/word typical – Double word/ Quadruple byte Program ■ Memory Blocks – Memory Array: 63 Main Blocks – 8 Parameter Blocks (Top or Bottom Location) ■ Erase Suspend and Resume modes – Read and Program another Block during Erase Suspend ■ Unlock Bypass Program command – Faster Production/Batch Programming ■ VPP/WP pin for fast Program and Write Protect ■ Temporary Block Unprotection mode ■ Common Flash Interface – 64 bit Security code ■ Extended memory Block – Extra block used as security block or to store additional information ■ Low power consumption – Standby and Automatic Standby ■ 100,000 Program/Erase cycles per block ■ Electronic signature – Manufacturer code: 0020h – Top Device code M29W320ET: 2256h – Bottom Device code M29W320EB: 2257h ■ ECOPACK® packages available FBGA TSOP48 (N) 12 x 20mm TFBGA48 (ZE) 6 x 8mm www.numonyx.com |
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