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RD38F2040W0YDQ0 Datasheet(PDF) 1 Page - Numonyx B.V |
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RD38F2040W0YDQ0 Datasheet(HTML) 1 Page - Numonyx B.V |
1 / 46 page Order Number: 251407-13 November 2007 Numonyx™ Wireless Flash Memory (W18/W30 SCSP) 32WQ and 64WQ Family with Asynchronous RAM Datasheet Product Features Device Architecture — Flash Density: 32-Mbit, 64-Mbit — Async PSRAM Density: 16-Mbit, 32-Mbit — Top, Bottom or Dual flash parameter configuration Device Voltage — Flash VCC = 1.8 V; Flash VCCQ = 1.8 V or 3.0 V — RAM VCC = 1.8 V or 3.0 V Device Packaging — 88 balls (8 x 10 active ball matrix) — Area: 8x10 mm — Height: 1.2 mm to 1.4 mm PSRAM Performance — 70 ns initial access, 25 ns async page reads at 1.8 V I/O — 70 ns initial access async PSRAM at 1.8 V I/O — 70 ns initial access, 25 ns async page reads at 3.0 V I/O SRAM Performance — 70 ns initial access at 1.8 V or 3.0 V I/O Quality and Reliability — Extended Temperature: –25 °C to +85 °C — Minimum 100K flash block erase cycle — 90 nm ETOX™ IX flash technology — 130 nm ETOX™ VIII flash technology Flash Performance — 65 ns initial access at 1.8 V I/O — 70 ns initial access at 3.0 V I/O — 25 ns async page at 1.8 V or 3.0 V I/O — 14 ns sync reads (tCHQV) at 1.8 V I/O — 20 ns sync reads (tCHQV) at 3.0 V I/O — Enhanced Factory Programming: 3.10 µs/Word (Typ) Flash Architecture — Read-While-Write/Erase — Asymmetrical blocking structure — 4-KWord parameter blocks (Top or Bottom) — 32-KWord main blocks — 4-Mbit partition size — 128-bit One-Time Programmable (OTP) Protection Register — Zero-latency block locking — Absolute write protection with block lock using F-VPP and F-WP# Flash Software — Numonyx™ Flash Data Integrator (FDI) and Common Flash Interface (CFI) |
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