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TISP61089P Datasheet(PDF) 3 Page - Bourns Electronic Solutions |
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TISP61089P Datasheet(HTML) 3 Page - Bourns Electronic Solutions |
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3 / 12 page  Specifications are subject to change without notice. 3 NOVEMBER 1995 - REVISED AUGUST 2002 TISP61089 Gated Protector Series Recommended Operating Conditions Component Min Typ Max Unit CG Gate decoupling capacitor 100 220 nF RS Series resistor for GR-1089-CORE first-level surge survival 25 Ω Series resistor for GR-1089-CORE first-level and second-level surge survival 40 Ω Series resistor for GR-1089-CORE intra-building port surge survival 8 Ω Series resistor for K.20, K.21 and K.45 coordination with a 400 V primary protector 10 Ω Electrical Characteristics, TJ = 25 °C (Unless Otherwise Noted) Parameter Test Conditions Min Typ Max Unit ID Off-state current VD =VDRM, VGK =0 TJ = 25 °C-5 µA TJ = 85 °C-50 µA V(BO) Breakover voltage 2/10 µs, IPP = -56 A, RS = 45 Ω, VGG = -48 V, CG = 220 nF 2/10 µs, IPP = -100 A, RS = 50 Ω, VGG = -48V, CG = 220 nF 1.2/50 µs, IPP = -53A, RS = 47 Ω, VGG = -48 V, CG = 220 nF 1.2/50 µs, IPP = -96A, RS = 52 Ω, VGG = -48 V, CG = 220 nF -57 -60 -60 -64 V VGK(BO) Gate-cathode impulse breakover voltage 2/10 µs, IPP = -56 A, RS = 45 Ω, VGG = -48 V, CG = 220 nF 2/10 µs, IPP = -100 A, RS = 50 Ω, VGG = -48V, CG = 220 nF 1.2/50 µs, IPP = -53A, RS = 47 Ω, VGG = -48 V, CG = 220 nF 1.2/50 µs, IPP = -96A, RS = 52 Ω, VGG = -48 V, CG = 220 nF 9 12 12 16 V VF Forward voltage IF =5A, tw =200 µs3 V VFRM Peak forward recovery voltage 2/10 µs, IPP = 56 A, RS = 45 Ω, VGG = -48 V, CG = 220 nF 2/10 µs, IPP = 100 A, RS = 50 Ω, VGG = -48V, CG = 220 nF 1.2/50 µs, IPP = 53 A, RS = 47 Ω, VGG = -48 V, CG = 220 nF 1.2/50 µs, IPP = 96 A, RS = 52 Ω, VGG = -48 V, CG = 220 nF 6 8 8 12 V IH Holding current IT =-1A, di/dt = 1A/ms, VGG =-48 V -150 mA IGKS Gate reverse current VGG =VGK =VGKRM, VKA =0 TJ = 25 °C-5 µA TJ = 85 °C-50 µA IGT Gate trigger current IT =-3A, tp(g) ≥ 20 µs, VGG =-48 V 5 mA VGT Gate-cathode trigger voltage IT =-3A, tp(g) ≥ 20 µs, VGG =-48 V 2.5 V QGS Gate sw itching charge 1.2/50 µs, IPP = -53A, RS = 47 Ω, VGG = -48 V, CG = 220 nF 0.1 µC CKA Cathode-anode off- state capacitance f=1MHz, Vd =1V, IG = 0, (see Note 3) VD =-3V 100 pF VD =-48 V 50pF NOTES: 3. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured device terminals are a.c. connected to the guard terminal of the bridge. Thermal Characteristics Parameter Test Conditions Min Typ Max Unit RθJA Junction to free air thermal resistance TA = 25 °C, EIA/JESD51-3 PCB, EIA/JESD51-2 environment, PTOT = 1.7 W D Package 120 °C/W P package 100 |
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