Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.NET

X  

M58LT256JST8ZA6F Datasheet(PDF) 1 Page - Numonyx B.V

Part # M58LT256JST8ZA6F
Description  256 Mbit (16 Mb 횞 16, multiple bank, multilevel, burst) 1.8 V supply, secure Flash memories
Download  108 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  NUMONYX [Numonyx B.V]
Direct Link  http://www.numonyx.com
Logo NUMONYX - Numonyx B.V

M58LT256JST8ZA6F Datasheet(HTML) 1 Page - Numonyx B.V

  M58LT256JST8ZA6F Datasheet HTML 1Page - Numonyx B.V M58LT256JST8ZA6F Datasheet HTML 2Page - Numonyx B.V M58LT256JST8ZA6F Datasheet HTML 3Page - Numonyx B.V M58LT256JST8ZA6F Datasheet HTML 4Page - Numonyx B.V M58LT256JST8ZA6F Datasheet HTML 5Page - Numonyx B.V M58LT256JST8ZA6F Datasheet HTML 6Page - Numonyx B.V M58LT256JST8ZA6F Datasheet HTML 7Page - Numonyx B.V M58LT256JST8ZA6F Datasheet HTML 8Page - Numonyx B.V M58LT256JST8ZA6F Datasheet HTML 9Page - Numonyx B.V Next Button
Zoom Inzoom in Zoom Outzoom out
 1 / 108 page
background image
December 2007
Rev 4
1/108
1
M58LT256JST
M58LT256JSB
256 Mbit (16 Mb × 16, multiple bank, multilevel, burst)
1.8 V supply, secure Flash memories
Features
Supply voltage
–VDD = 1.7 V to 2.0 V for program, erase
and read
–VDDQ = 2.7 V to 3.6 V for I/O buffers
–VPP = 9 V for fast program
Synchronous/asynchronous read
– Synchronous burst read mode: 52 MHz
– Random access: 85 ns
– Asynchronous page read mode
Synchronous burst read suspend
Programming time
– 5 µs typical word program time using Buffer
Enhanced Factory Program command
Memory organization
– Multiple bank memory array: 16 Mbit banks
– Parameter blocks (top or bottom location)
Dual operations
– Program/erase in one bank while read in
others
– No delay between read and write
operations
Block protection
– All blocks protected at power-up
– Any combination of blocks can be protected
with zero latency
– Absolute write protection with VPP = VSS
Security
– Software security features
– 64 bit unique device number
– 2112 bit user programmable OTP Cells
CFI (common Flash interface)
100 000 program/erase cycles per block
Electronic signature
– Manufacturer code: 20h
– Top device codes:
M58LT256JST: 885Eh
– Bottom device codes
M58LT256JSB: 885Fh
TBGA64 package
– ECOPACK® compliant
TBGA64 (ZA)
10 x 13 mm
BGA
www.numonyx.com


Similar Part No. - M58LT256JST8ZA6F

ManufacturerPart #DatasheetDescription
logo
STMicroelectronics
M58LT256JST8ZA6F STMICROELECTRONICS-M58LT256JST8ZA6F Datasheet
836Kb / 106P
   256 Mbit (16 Mb 횞 16, multiple bank, multilevel, burst) 1.8 V supply, secure Flash memories
More results

Similar Description - M58LT256JST8ZA6F

ManufacturerPart #DatasheetDescription
logo
STMicroelectronics
M58LT256JST STMICROELECTRONICS-M58LT256JST Datasheet
836Kb / 106P
   256 Mbit (16 Mb 횞 16, multiple bank, multilevel, burst) 1.8 V supply, secure Flash memories
M58PR256LE STMICROELECTRONICS-M58PR256LE Datasheet
939Kb / 119P
   256-Mbit, 512-Mbit or 1-Gbit (횞 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories
M58LT128HST STMICROELECTRONICS-M58LT128HST Datasheet
816Kb / 110P
   128-Mbit (8 Mb 횞16, Multiple Bank, Multilevel interface, Burst) 1.8 V supply, Secure Flash memories
logo
Numonyx B.V
M58LT128HST NUMONYX-M58LT128HST Datasheet
1Mb / 110P
   128 Mbit (8 Mb 횞16, multiple bank, multilevel interface, burst) 1.8 V supply, secure Flash memories
M58PR512LE NUMONYX-M58PR512LE Datasheet
2Mb / 123P
   512-Mbit or 1-Gbit (횞 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories
logo
STMicroelectronics
M58PR256J STMICROELECTRONICS-M58PR256J Datasheet
842Kb / 114P
   256 Mbit or 512 Mbit (x16, Multiple Bank, Multilevel, Burst) 1.8 V supply Flash memories
M58LR128HT STMICROELECTRONICS-M58LR128HT Datasheet
844Kb / 112P
   128 Mbit (8 Mb 횞16, Multiple Bank, Multilevel interface, Burst) 1.8 V supply Flash memories
logo
Numonyx B.V
M58LR128KT NUMONYX-M58LR128KT Datasheet
1Mb / 110P
   128 or 256 Mbit (횞16, multiple bank, multilevel interface, burst) 1.8 V supply Flash memories
M58LR128KC NUMONYX-M58LR128KC Datasheet
1Mb / 108P
   128 or 256 Mbit (x16, mux I/O, multiple bank, multilevel interface, burst) 1.8 V supply Flash memories
M36P0R8070E0 NUMONYX-M36P0R8070E0 Datasheet
638Kb / 22P
   256 Mbit (x16, multiple bank, multilevel, burst) Flash memory 128 Mbit (burst) PSRAM, 1.8 V supply, multichip package
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100  ...More


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.NET
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com