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M29W400DT55N6 Datasheet(PDF) 1 Page - Numonyx B.V |
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M29W400DT55N6 Datasheet(HTML) 1 Page - Numonyx B.V |
1 / 48 page December 2007 Rev 6 1/48 1 M29W400DT M29W400DB 4 Mbit (512 Kb x 8 or 256 Kb x 16, boot block) 3 V supply Flash memory Features ■ Supply voltage –VCC = 2.7 V to 3.6 V for Program, Erase and Read ■ Access time: 45, 55, 70 ns ■ Programming time – 10 µs per byte/word typical ■ 11 memory blocks – 1 boot block (top or bottom location) – 2 parameter and 8 main blocks ■ Program/Erase controller – Embedded byte/word program algorithms ■ Erase Suspend and Resume modes – Read and Program another block during Erase Suspend ■ Unlock bypass program command – Faster production/batch programming ■ Temporary block unprotection mode ■ Low power consumption – Standby and Automatic Standby ■ 100,000 Program/Erase cycles per block ■ Electronic signature – Manufacturer code: 0020h – Top device code M29W400DT: 00EEh – Bottom device code M29W400DB: 00EFh –ECOPACK® packages 1. These packages are no more in mass production. TFBGA48 (ZA)(1) 6 x 9 mm FBGA SO44 (M)(1) TFBGA48 (ZE) 6 x 8 mm TSOP48 (N) 12 x 20 mm FBGA www.numonyx.com |
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