RJK5003DPD-00-Q2 datasheet(2/7 Pages) RENESAS

Part #	RJK5003DPD-00-Q2

Description	Silicon N Channel Power MOS FET High Speed Power Switching Use

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Manufacturer	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

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2 / 7 page

RJK5003DPD

Rev.2.00,

Mar 14, 2006,

page 2 of 6

Electrical Characteristics

(Tch = 25°C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test conditions

Drain to source breakdown voltage

V(BR)DSS

500

—

V

ID = 1 mA, VGS = 0 V

Zero gate voltage drain current

IDSS

—

1

mA

VDS = 500 V, VGS = 0 V

Gate to source leak current

IGSS

—

±0.1

µA

VGS =

±25 V, VDS = 0 V

Gate to source cutoff voltage

VGS(off)

3.0

3.5

4.0

V

ID = 1 mA, VDS = 10 V

Static drain to source on state

resistance

RDS(on)

—

1.3

1.5

Ω

ID= 2 A, VGS = 10 V

Note2

Input capacitance

Ciss

—

550

—

pF

Output capacitance

Coss

—

60

—

pF

Reverse transfer capacitance

Crss

—

10

—

pF

VDS = 25 V, VGS= 0 V,

f = 1 MHz

Turn-on delay time

td(on)

—

20

—

ns

Rise time

tr

—

20

—

ns

Turn-off delay time

td(off)

—

60

—

ns

Fall time

tf

—

25

—

ns

VDD = 200 V, ID = 2 A,

VGS = 10 V

RG = 25

Ω

Body-drain diode forward voltage

VDF

—

1.0

1.5

V

IF = 2 A, VGS = 0 V

Note2

Note:

2. Pulse test

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