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RJK5003DPD-00-Q2 Datasheet(PDF) 2 Page - Renesas Technology Corp |
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RJK5003DPD-00-Q2 Datasheet(HTML) 2 Page - Renesas Technology Corp |
2 / 7 page RJK5003DPD Rev.2.00, Mar 14, 2006, page 2 of 6 Electrical Characteristics (Tch = 25°C) Parameter Symbol Min. Typ. Max. Unit Test conditions Drain to source breakdown voltage V(BR)DSS 500 — — V ID = 1 mA, VGS = 0 V Zero gate voltage drain current IDSS — — 1 mA VDS = 500 V, VGS = 0 V Gate to source leak current IGSS — — ±0.1 µA VGS = ±25 V, VDS = 0 V Gate to source cutoff voltage VGS(off) 3.0 3.5 4.0 V ID = 1 mA, VDS = 10 V Static drain to source on state resistance RDS(on) — 1.3 1.5 Ω ID= 2 A, VGS = 10 V Note2 Input capacitance Ciss — 550 — pF Output capacitance Coss — 60 — pF Reverse transfer capacitance Crss — 10 — pF VDS = 25 V, VGS= 0 V, f = 1 MHz Turn-on delay time td(on) — 20 — ns Rise time tr — 20 — ns Turn-off delay time td(off) — 60 — ns Fall time tf — 25 — ns VDD = 200 V, ID = 2 A, VGS = 10 V RG = 25 Ω Body-drain diode forward voltage VDF — 1.0 1.5 V IF = 2 A, VGS = 0 V Note2 Note: 2. Pulse test |
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