NTR2101PT1G datasheet(3/5 Pages) ONSEMI

Part #	NTR2101PT1G

Description	Small Signal MOSFET

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Manufacturer	ONSEMI [ON Semiconductor]

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NTR2101P

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3

0

2

4

6

8

10

0

1

23

45

VGS = −2.6 V to −6.0 V

VGS = −2.4 V

VGS = −2.2 V

VGS = −2.0 V

VGS = −1.8 V

VGS = −1.4 V

VGS = −1.2 V

−VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics

0

2

4

6

8

10

01

2

3

4

TJ = 25°C

−VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 2. Transfer Characteristics

VDS ≥ −10 V

TJ = 25°C

TJ = 150°C

TJ = −55°C

0

0.05

0.1

0.15

0.2

0.25

01

2

3

4

5

6

−VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 3. On−Resistance versus

Gate−to−Source Voltage

ID = −3.7 A

TJ = 25°C

0

0.02

0.04

0.06

0.08

23

45

67

8

−ID, DRAIN CURRENT (A)

TJ = 150°C

TJ = 25°C

TJ = −55°C

Figure 4. On−Resistance versus Drain Current

and Gate Voltage

VGS = −4.5 V

0.8

0.9

1.1

1.2

1.3

1.4

1.5

1.6

1.7

−50

−25

0

25

50

75

100

125

150

1.0

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

Temperature

ID = −3.7 A

VGS = −4.5 V

100

1000

10000

100000

02

46

8

−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 6. Drain−to−Source Leakage Current

versus Voltage

VGS = 0 V

TJ = 150°C

TJ = 100°C

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