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PI2EQX4402DNBE Datasheet(PDF) 5 Page - Pericom Semiconductor Corporation |
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PI2EQX4402DNBE Datasheet(HTML) 5 Page - Pericom Semiconductor Corporation |
5 / 8 page 5 PS8873B 11/16/06 PI2EQX4402D 2.5Gbps x2 Lane Serial PCI Express Repeater / Equalizer with Signal Detect feature AC/DC Electrical Characteristics for 2.5 Gbps Quad Repeater/Equalizer (VDD = 1.8 ±0.1V) Symbol Parameter Conditions Min. Typ. Max. Units Ps Supply Power EN = LVCMOS Low 0.1 W EN = LVCMOS High 0.6 Latency From input to output 2.0 ns CML Receiver Input RLRX Return Loss 50 MHz to 1.25 GHz 12 dB VRX-DIFFP-P Differential Input Peak-to- peak Voltage 0.175 1.200 V VRX-CM-ACP AC Peak Common Mode Input Voltage 150 mV VTH- Signal Detect Threshold EN_X = High 120 175 mV ZRX-DIFF-DC DC Differential Input Impedance 80 100 120 Ω ZRX-DC DC Input Impedance 40 50 60 Equalization JRS Residual Jitter(1,2) Total Jitter 0.3 Ulp-p Deterministic jitter 0.2 JRM Random Jitter(1,2) 1.5 psrms Notes 1. K28.7 pattern is applied differentially at point A as shown in Figure 1. 2. Total jitter does not include the signal source jitter. Total jitter (TJ) = (14.1 × RJ + DJ) where RJ is random RMS jitter and DJ is maximum deterministic jitter. Signal source is a K28.5 ± pattern (00 1111 1010 11 0000 0101) for the deterministic jitter test and K28.7 (0011111000) or equivalent for random jitter test. Residual jitter is that which remains after equalizing media-induced losses of the environment of Figure 1 or its equivalent. The deterministic jitter at point B must be from media-induced loss, and not from clock source modulation. Jitter is measured at 0V at point C of Figure 1. Storage Temperature........................................................ –65°C to +150°C Supply Voltage to Ground Potential................................... –0.5V to +2.5V DC SIG Voltage..........................................................–0.5V to VDD +0.5V Current Output ................................................................-25mA to +25mA Power Dissipation Continous ......................................................... 800mW Operating Temperature.............................................................. 0 to +70°C Note: Stresses greater than those listed under MAXIMUM RAT- INGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for ex- tended periods may affect reliability. Maximum Ratings (Above which useful life may be impaired. For user guidelines, not tested.) 06-0306 |
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