eorex

Preliminary

EM488M3244LBB

May. 2007

www.eorex.com

256Mb (2M

Features

• Fully Synchronous to Positive Clock Edge

• Single 1.8V

±0.1V Power Supply

• LVCMOS Compatible with Multiplexed Address

• Programmable Burst Length (B/L) - 1, 2, 4, 8

or Full Page

• Programmable CAS Latency (C/L) - 2 or 3

• Data Mask (DQM) for Read / Write Masking

• Programmable Wrap Sequence

– Sequential (B/L = 1/2/4/8/full Page)

– Interleave (B/L = 1/2/4/8)

• Burst Read with Single-bit Write Operation

• Deep Power Down Mode.

• Auto Refresh and Self Refresh

• Special Function Support.

– PASR (Partial Array Self Refresh)

– Auto TCSR (Temperature Compensated Self

Refresh)

• Programmable Driver Strength Control

– Full Strength or 1/2, 1/4 of Full Strength

• 4,096 Refresh Cycles / 64ms (15.625us)

Description

The EM488M3244LBB is Synchronous Dynamic

Random Access Memory (SDRAM) organized as

2Meg words x 4 banks by 32 bits. All inputs and

outputs are synchronized with the positive edge of

the clock.

The 256Mb SDRAM uses synchronized pipelined

architecture to achieve high speed data transfer

rates and is designed to operate at 1.8V low power

memory system. It also provides auto refresh with

power saving / down mode. All inputs and outputs

voltage levels are compatible with LVCMOS.

Available packages: BGA-90B (13mmx8mm)

Ordering Information

Part No

Organization

Max. Freq

Package

Grade

Pb

EM488M3244LBB-75F

8M X 32

133MHz @CL3

BGA-90B

Commercial

Free

EM488M3244LBB-75FE

8M X 32

133MHz @CL3

BGA-90B

Extend temp. Free

* EOREX reserves the right to change products or specification without notice.

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