512Kx8 LP SRAM EM6112K800V Series

1

DCC-SR-041005-A

GENERAL DESCRIPTION

The EM6112K800V is a 4,194,304-bit low power CMOS static random access memory organized as

524,288 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology.

Its standby current is stable within the range of operating temperature.

The EM6112K800V is well designed for low power application, and particularly well suited for battery

back-up nonvolatile memory application.

The EM6112K800V operates from a single power supply of 2.7V ~ 3.6V and all inputs and outputs are

fully TTL compatible

FEATURES

Fast access time: 45/55/70ns

Low power consumption:

Operating current:

40/30/20mA (TYP.)

Standby current: -L/-LL version

20/2µA (TYP.)

Single 2.7V ~ 3.6V power supply

All inputs and outputs TTL compatible

Fully static operation

Tri-state output

Data retention voltage: 1.5V (MIN.)

Package:

32-pin 450 mil SOP

32-pin 8mm x 20mm TSOP-I

32-pin 8mm x 13.4mm STSOP

36-ball 6mm x 8mm TFBGA

FUNCTIONAL BLOCK DIAGRAM

PIN DESCRIPTION

SYMBOL

DESCRIPTION

A0 - A18

Address Inputs

DQ0 – DQ7

Data Inputs/Outputs

CE#

Enable Input

WE#

Write Enable Input

OE#

Output Enable Input

Vcc

Power Supply

Vss

Ground

I/O DATA

CURCUIT

COLUMN I/O

CONTROL

CIRCUIT

Vcc

Vss

A0-A18

DQ0-DQ7

CE#

WE#

OE#

DECODER

512Kx8

MEMORY

ARRAY