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EM42AM1684LBA-75FE Datasheet(PDF) 1 Page - Eorex Corporation |
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EM42AM1684LBA-75FE Datasheet(HTML) 1 Page - Eorex Corporation |
1 / 20 page eorex EM42BM1684LBA Jul. 2006 www.eorex.com 512Mb (8M ×4Bank×16) Double DATA RATE SDRAM Features • Internal Double-Date-Rate architecture with 2 Accesses per clock cycle. • 1.8V ±0.1V VDD/VDDQ • 1.8V LV-COMS compatible I/O • Burst Length (B/L) of 2, 4, 8, 16 • 3 Clock read latency (CL3) • Bi-directional,intermittent data strobe(DQS) • All inputs except data and DM are sampled at the positive edge of the system clock. • Data Mask (DM) for write data • Sequential & Interleaved Burst type available • Auto Precharge option for each burst accesses • DQS edge-aligned with data for Read cycles • DQS center-aligned with data for Write cycles • No DLL;CK to DQS is not synchronized • Deep power down mode • Partial Array Self-Refresh(PASR) • Auto Temperature Compensated Self-Refresh (TCSR) by built-in temperature sensor • Auto Refresh and Self Refresh • 8,192 Refresh Cycles / 64ms Description The EM42BM1684LBA is high speed Synchronous graphic RAM fabricated with ultra high performance CMOS process containing 536,870,912 bits which organized as 8Meg words x 4 banks by 16 bits. The 512Mb DDR SDRAM uses a double data rate architecture to accomplish high-speed operation. The data path internally prefetches multiple bits and It transfers the datafor both rising and falling edges of the system clock.It means the doubled data bandwidth can be achieved at the I/O pins. Available packages:FBGA-60B(12mmx10mm). Ordering Information Part No Organization Max. Freq Package Grade Pb EM42BM1684LBA-75F 32M X 16 133MHz/DDR266 @CL3 BGA-60B Commercial. Free EM42BM1684LBA-75FE 32M X 16 133MHz/DDR266 @CL3 BGA-60B Extend Temp. Free * EOREX reserves the right to change products or specification without notice. 1/20 |
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