DS05-13103-6Ea

FUJITSU MICROELECTRONICS

DATA SHEET

Copyright©2005-2008 FUJITSU MICROELECTRONICS LIMITED All rights reserved

2008.2

Memory FRAM

CMOS

1 M Bit (128 K

× 8)

MB85R1001

■ DESCRIPTIONS

The MB85R1001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words x 8 bits

of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.

The MB85R1001 is able to retain data without using a back-up battery, as is needed for SRAM.

The MB85R1001 uses a pseudo-SRAM interface that is compatible with conventional asynchronous SRAM.

■ FEATURES

• Bit configuration

: 131,072 words

× 8bits

• Read/write endurance

• Operating power supply voltage : 3.0 V to 3.6 V

• Operating temperature range

:

− 20 °C to + 85 °C

• Data retention

: 10 years (

+ 55 °C)

• Package

: 48-pin plastic TSOP (1)