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MB85R1001 Datasheet(PDF) 1 Page - Fujitsu Component Limited. |
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MB85R1001 Datasheet(HTML) 1 Page - Fujitsu Component Limited. |
1 / 12 page DS05-13103-6Ea FUJITSU MICROELECTRONICS DATA SHEET Copyright©2005-2008 FUJITSU MICROELECTRONICS LIMITED All rights reserved 2008.2 Memory FRAM CMOS 1 M Bit (128 K × 8) MB85R1001 ■ DESCRIPTIONS The MB85R1001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words x 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies. The MB85R1001 is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85R1001 can be used for at least 1010 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM. The MB85R1001 uses a pseudo-SRAM interface that is compatible with conventional asynchronous SRAM. ■ FEATURES • Bit configuration : 131,072 words × 8bits • Read/write endurance : 1010 times/bit (Min) • Operating power supply voltage : 3.0 V to 3.6 V • Operating temperature range : − 20 °C to + 85 °C • Data retention : 10 years ( + 55 °C) • Package : 48-pin plastic TSOP (1) |
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