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M29F016B90M1T Datasheet(PDF) 3 Page - STMicroelectronics |
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M29F016B90M1T Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 22 page 3/22 M29F016B SUMMARY DESCRIPTION The M29F016B is a 16 Mbit (2Mb x8) non-volatile memory that can be read, erased and repro- grammed. These operations can be performed us- ing a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Blocks can be protected in groups to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are re- quired to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards. Chip Enable, Output Enable and Write Enable sig- nals control the bus operation of the memory. They allow simple connection to most micropro- cessors, often without additional logic. The memory is offered in a TSOP40 (10 x 20mm) and SO44 packages and it is supplied with all the bits erased (set to ’1’). Table 2. Absolute Maximum Ratings (1) Note: 1. Except for the rating ”Operating Temperature Range”, stresses above those listed in the Table ”Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating condi- tions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant qual- ity documents. 2. Minimum Voltage may undershoot to –2V during transition and for less than 20ns during transitions. Symbol Parameter Value Unit TA Ambient Operating Temperature (Temperature Range Option 1) 0 to 70 °C Ambient Operating Temperature (Temperature Range Option 6) –40 to 85 °C Ambient Operating Temperature (Temperature Range Option 3) –40 to 125 °C TBIAS Temperature Under Bias –50 to 125 °C TSTG Storage Temperature –65 to 150 °C VIO (2) Input or Output Voltage –0.6 to 6 V VCC Supply Voltage –0.6 to 6 V VID Identification Voltage –0.6 to 13.5 V |
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