M28F201-150XK3R datasheet(5/21 Pages) STMICROELECTRONICS

Part #	M28F201-150XK3R

Description	2 Mb 256K x 8, Chip Erase FLASH MEMORY

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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SRAM Interface Levels

EPROM Interface Levels

Input Rise and Fall Times

≤ 10ns

Input Pulse Voltages

0 to 3V

0.45V to 2.4V

Input and Output Timing Ref. Voltages

1.5V

0.8V and 2V

Table 6. AC Measurement Conditions

AI01275

3V

SRAM Interface

0V

1.5V

2.4V

EPROM Interface

0.45V

2.0V

0.8V

Figure 3. AC Testing Input Output Waveform

AI01276

1.3V

OUT

CL = 30pF or 100pF

CL = 30pF for SRAM Interface

CL = 100pF for EPROM Interface

CL includes JIG capacitance

3.3k

Ω

1N914

DEVICE

UNDER

TEST

Figure 4. AC Testing Load Circuit

Symbol

Parameter

Test Condition

Min

Max

Unit

CIN

Input Capacitance

VIN =0V

6

pF

COUT

Output Capacitance

VOUT =0V

12

pF

Note: 1. Sampled only, not 100% tested.

Table 7. Capacitance (1) (TA =25

°C, f = 1 MHz )

Read Mode. The Read Mode is the default at

power up or may be set-up by writing 00h to the

command register. Subsequent read operations

output data from the memory. The memory remains

in the Read Mode until a new command is written

to the command register.

Electronic Signature Mode. In order to select the

correct erase and programming algorithms for on-

board programming, the manufacturer and device

codes may be read directly. It is not neccessary to

apply a high voltage to A9 when using the com-

mand register. The Electronic Signature Mode is

set-up by writing 80h or 90h to the command

register. The following read cycles, with address

inputs 00000h or 00001h, output the manufacturer

or device codes. The command is terminated by

writing another valid command to the command

register (for example Reset).

5/21

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