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VND5050K-E Datasheet(PDF) 8 Page - STMicroelectronics |
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VND5050K-E Datasheet(HTML) 8 Page - STMicroelectronics |
8 / 37 page Electrical specifications VND5050J-E / VND5050K-E 8/37 2.2 Thermal data Symbol Parameter Value Unit PowerSSO-12 PowerSSO-24 VESD Electrostatic discharge (Human Body Model: R=1.5K Ω; C=100pF) 4000 V VESD Charge device model (CDM-AEC-Q100-011) 750 V Tj Junction operating temperature -40 to 150 °C Tstg Storage temperature - 55 to 150 °C Table 4. Absolute maximum ratings (continued) Symbol Parameter Value Unit Table 5. Thermal data Rthj-case Thermal resistance junction-case (Max.) (with one channel ON) 2.8 2.8 °C/W Rthj-amb Thermal resistance junction-ambient (Max.) See Figure 31 See Figure 35 °C/W |
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