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M29F080A-120N6T Datasheet(PDF) 8 Page - STMicroelectronics |
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M29F080A-120N6T Datasheet(HTML) 8 Page - STMicroelectronics |
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8 / 21 page  M29F080A 8/21 Block Erase Command. The Block Erase com- mand can be used to erase a list of one or more blocks. Six Bus Write operations are required to select the first block in the list. Each additional block in the list can be selected by repeating the sixth Bus Write operation using the address of the additional block. The Block Erase operation starts the Program/Erase Controller about 50 µs after the last Bus Write operation. Once the Program/Erase Controller starts it is not possible to select any more blocks. Each additional block must therefore be selected within 50 µs of the last block. The 50µs timer restarts when an additional block is selected. The Status Register can be read after the sixth Bus Write operation. See the Status Register for details on how to identify if the Program/Erase Controller has started the Block Erase operation. If any selected blocks are protected then these are ignored and all the other selected blocks are erased. If all of the selected blocks are protected the Block Erase operation appears to start but will terminate within about 100 µs, leaving the data un- changed. No error condition is given when protect- ed blocks are ignored. During the Block Erase operation the memory will ignore all commands except the Erase Suspend and Read/Reset commands. Typical block erase times are given in Table 6. All Bus Read opera- tions during the Block Erase operation will output the Status Register on the Data Inputs/Outputs. See the section on the Status Register for more details. After the Block Erase operation has completed the memory will return to the Read Mode, unless an error has occurred. When an error occurs the memory will continue to output the Status Regis- ter. A Read/Reset command must be issued to re- set the error condition and return to Read mode. The Block Erase Command sets all of the bits in the unprotected selected blocks to ’1’. All previous data in the selected blocks is lost. Erase Suspend Command. The Erase Suspend Command may be used to temporarily suspend a Block Erase operation and return the memory to Read mode. The command requires one Bus Write operation. The Program/Erase Controller will suspend within 15 µs of the Erase Suspend Command being is- sued. Once the Program/Erase Controller has stopped the memory will be set to Read mode and the Erase will be suspended. If the Erase Suspend command is issued during the period when the memory is waiting for an additional block (before the Program/Erase Controller starts) then the Erase is suspended immediately and will start im- mediately when the Erase Resume Command is issued. It will not be possible to select any further blocks for erasure after the Erase Resume. During Erase Suspend it is possible to Read and Program cells in blocks that are not being erased; both Read and Program operations behave as normal on these blocks. Reading from blocks that are being erased will output the Status Register. It is also possible to enter the Auto Select mode: the memory will behave as in the Auto Select mode on all blocks until a Read/Reset command returns the memory to Erase Suspend mode. Erase Resume Command. The Erase Resume command must be used to restart the Program/ Erase Controller from Erase Suspend. An erase can be suspended and resumed more than once. Table 6. Program, Erase Times and Program, Erase Endurance Cycles (TA = 0 to 70 °C, –40 to 85 °C or –40 to 125 °C) Note: 1. TA =25°C, VCC =5V. Parameter Min Typ(1) Typical after 100k W/E Cycles(1) Max Unit Chip Erase (All bits in the memory set to ‘0’) 3 3 sec Chip Erase 8 8 30 sec Block Erase (64 Kbytes) 0.6 0.6 4 sec Program 8 8 150 µs Chip Program 9 9 35 sec Program/Erase Cycles (per Block) 100,000 cycles |
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