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M28F201-120K6R Datasheet(PDF) 2 Page - STMicroelectronics |
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M28F201-120K6R Datasheet(HTML) 2 Page - STMicroelectronics |
2 / 21 page AI00638C A13 A10 17 A1 A0 DQ0 A7 A4 A3 A2 A6 A5 9 A8 1 A9 DQ7 A14 32 M28F201 A11 G E 25 Figure 2A. LCC Pin Connections A1 A0 DQ0 A7 A4 A3 A2 A6 A5 A13 A10 A8 A9 DQ7 A14 A11 G E DQ5 DQ1 DQ2 DQ3 DQ4 DQ6 A17 W A16 A12 VPP VCC A15 AI00639C M28F201 (Normal) 8 1 9 16 17 24 25 32 VSS Figure 2B. TSOP Pin Connections DEVICE OPERATION The M28F201 FLASH Memory product employs a technology similar to a 2 Megabit EPROM but add to the device functionality by providing electrical erasure and programming. These functions are managed by a command register. The functions that are addressed via the command register de- pend on the voltage applied to the VPP, program voltage, input. When VPP is less than or equal to 6.5V, the command register is disabled and the M28F201 functions as a read only memory provid- ing operating modes similar to an EPROM (Read, Output Disable, Electronic Signature Read and Standby). When VPP is raised to 12V the command register is enabled and this provides, in addition, Erase and Program operations. READ ONLY MODES, VPP ≤ 6.5V For all Read Only Modes, except Standby Mode, the Write Enable input W should be High. In the Standby Mode this input is ’don’t care’. Read Mode. The M28F201 has two enable inputs, E and G, both of which must be Low in order to output data from the memory. The Chip Enable (E) is the power control and should be used for device selection. Output Enable (G) is the output control and should be used to gate data on to the output, independant of the device selection. A1 A0 DQ0 A7 A4 A3 A2 A6 A5 A13 A10 A8 A9 DQ7 A14 A11 G E DQ5 DQ1 DQ2 DQ3 DQ4 DQ6 A17 W A16 A12 VPP VCC A15 AI00640D M28F201 (Reverse) 8 9 16 17 24 25 VSS 32 1 Figure 2C. TSOP Reverse Pin Connections 2/21 M28F201 |
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