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M28W640ECT10ZB6 Datasheet(PDF) 11 Page - STMicroelectronics |
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M28W640ECT10ZB6 Datasheet(HTML) 11 Page - STMicroelectronics |
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11 / 55 page  11/55 M28W640ECT, M28W640ECB COMMAND INTERFACE All Bus Write operations to the memory are inter- preted by the Command Interface. Commands consist of one or more sequential Bus Write oper- ations. An internal Program/Erase Controller han- dles all timings and verifies the correct execution of the Program and Erase commands. The Pro- gram/Erase Controller provides a Status Register whose output may be read at any time during, to monitor the progress of the operation, or the Pro- gram/Erase states. See Table 3, Command Codes, for a summary of the commands and see Appendix 22, Table 32, Write State Machine Cur- rent/Next, for a summary of the Command Inter- face. The Command Interface is reset to Read mode when power is first applied, when exiting from Re- set or whenever VDD is lower than VLKO. Com- mand sequences must be followed exactly. Any invalid combination of commands will reset the de- vice to Read mode. Refer to Table 4, Commands, in conjunction with the text descriptions below. Read Memory Array Command The Read command returns the memory to its Read mode. One Bus Write cycle is required to is- sue the Read Memory Array command and return the memory to Read mode. Subsequent read op- erations will read the addressed location and out- put the data. When a device Reset occurs, the memory defaults to Read mode. Read Status Register Command The Status Register indicates when a program or erase operation is complete and the success or failure of the operation itself. Issue a Read Status Register command to read the Status Register’s contents. Subsequent Bus Read operations read the Status Register at any address, until another command is issued. See Table 11, Status Register Bits, for details on the definitions of the bits. The Read Status Register command may be is- sued at any time, even during a Program/Erase operation. Any Read attempt during a Program/ Erase operation will automatically output the con- tent of the Status Register. Read Electronic Signature Command The Read Electronic Signature command reads the Manufacturer and Device Codes and the Block Locking Status, or the Protection Register. The Read Electronic Signature command consists of one write cycle, a subsequent read will output the Manufacturer Code, the Device Code, the Block Lock and Lock-Down Status, or the Protec- tion and Lock Register. See Tables 5, 6 and 7 for the valid address. Table 3. Command Codes Read CFI Query Command The Read Query Command is used to read data from the Common Flash Interface (CFI) Memory Area, allowing programming equipment or appli- cations to automatically match their interface to the characteristics of the device. One Bus Write cycle is required to issue the Read Query Com- mand. Once the command is issued subsequent Bus Read operations read from the Common Flash Interface Memory Area. See Appendix B, Common Flash Interface, Tables 26, 27, 28, 29, 30 and 31 for details on the information contained in the Common Flash Interface memory area. Block Erase Command The Block Erase command can be used to erase a block. It sets all the bits within the selected block to ’1’. All previous data in the block is lost. If the block is protected then the Erase operation will abort, the data in the block will not be changed and the Status Register will output the error. Two Bus Write cycles are required to issue the command. s The first bus cycle sets up the Erase command. Hex Code Command 01h Block Lock confirm 10h Program 20h Erase 2Fh Block Lock-Down confirm 30h Double Word Program 40h Program 50h Clear Status Register 56h Quadruple Word Program 60h Block Lock, Block Unlock, Block Lock- Down 70h Read Status Register 90h Read Electronic Signature 98h Read CFI Query B0h Program/Erase Suspend C0h Protection Register Program D0h Program/Erase Resume, Block Unlock confirm FFh Read Memory Array |
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