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M29F200BB70N1T Datasheet(PDF) 6 Page - STMicroelectronics |
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M29F200BB70N1T Datasheet(HTML) 6 Page - STMicroelectronics |
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6 / 22 page  M29F200BT, M29F200BB 6/22 Standby. When Chip Enable is High, VIH, the Data Inputs/Outputs pins are placed in the high- impedance state and the Supply Current is re- duced to the Standby level. When Chip Enable is at VIH the Supply Current is reduced to the TTL Standby Supply Current, ICC2. To further reduce the Supply Current to the CMOS Standby Supply Current, ICC3, Chip Enable should be held within VCC ± 0.2V. For Standby current levels see Table 10, DC Characteristics. During program or erase operations the memory will continue to use the Program/Erase Supply Current, ICC4, for Program or Erase operations un- til the operation completes. Automatic Standby. If CMOS levels (VCC ± 0.2V) are used to drive the bus and the bus is inactive for 150ns or more the memory enters Automatic Standby where the internal Supply Current is re- duced to the CMOS Standby Supply Current, ICC3. The Data Inputs/Outputs will still output data if a Bus Read operation is in progress. Special Bus Operations Additional bus operations can be performed to read the Electronic Signature and also to apply and remove Block Protection. These bus opera- tions are intended for use by programming equip- ment and are not usually used in applications. They require VID to be applied to some pins. Electronic Signature. The memory has two codes, the manufacturer code and the device code, that can be read to identify the memory. These codes can be read by applying the signals listed in Tables 4A and 4B, Bus Operations. Block Protection and Blocks Unprotection. Each block can be separately protected against acci- dental Program or Erase. Protected blocks can be unprotected to allow data to be changed. There are two methods available for protecting and unprotecting the blocks, one for use on pro- gramming equipment and the other for in-system use. For further information refer to Application Note AN1122, Applying Protection and Unprotec- tion to M29 Series Flash. COMMAND INTERFACE All Bus Write operations to the memory are inter- preted by the Command Interface. Commands consist of one or more sequential Bus Write oper- ations. Failure to observe a valid sequence of Bus Write operations will result in the memory return- ing to Read mode. The long command sequences are imposed to maximize data security. The address used for the commands changes de- pending on whether the memory is in 16-bit or 8- bit mode. See either Table 5A, or 5B, depending on the configuration that is being used, for a sum- mary of the commands. Read/Reset Command. The Read/Reset com- mand returns the memory to its Read mode where it behaves like a ROM or EPROM. It also resets the errors in the Status Register. Either one or three Bus Write operations can be used to issue the Read/Reset command. If the Read/Reset command is issued during a Block Erase operation or following a Programming or Erase error then the memory will take upto 10 µs to abort. During the abort period no valid data can be read from the memory. Issuing a Read/Reset command during a Block Erase operation will leave invalid data in the memory. Auto Select Command. The Auto Select com- mand is used to read the Manufacturer Code, the Device Code and the Block Protection Status. Three consecutive Bus Write operations are re- quired to issue the Auto Select command. Once the Auto Select command is issued the memory remains in Auto Select mode until another com- mand is issued. From the Auto Select mode the Manufacturer Code can be read using a Bus Read operation with A0 = VIL and A1 = VIL. The other address bits may be set to either VIL or VIH. The Manufacturer Code for STMicroelectronics is 0020h. The Device Code can be read using a Bus Read operation with A0 = VIH and A1 = VIL. The other address bits may be set to either VIL or VIH. The Device Code for the M29F200BT is 00D3h and for the M29F200BB is 00D4h. |
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