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SFH601-4X007 Datasheet(PDF) 2 Page - Vishay Siliconix |
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SFH601-4X007 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 10 page www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83663 2 Rev. 1.3, 25-Jan-08 SFH601 Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection Notes (1) Tamb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP). Note Tamb = 25 °C, unless otherwise specified. Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. OUTPUT Collector emitter voltage VCE 100 V Emitter base voltage VEBO 7.0 V Collector current IC 50 mA t = 1.0 ms IC 100 mA Power dissipation Pdiss 150 mW COUPLER Isolation test voltage between emitter and detector, referred to climate DIN 40046, part 2, Nov. 74 t = 1.0 s VISO 5300 VRMS Isolation resistance VIO = 500 V, Tamb = 25 °C RIO ≥ 1012 Ω VIO = 500 V, Tamb = 100 °C RIO ≥ 1011 Ω Storage temperature range Tstg - 55 to + 150 °C Ambient temperature range Tamb - 55 to +100 °C Junction temperature Tj 100 °C Soldering temperature (2) max. 10 s, dip soldering: distance to seating plane ≥ 1.5 mm Tsld 260 °C ELECTRICAL CHARACTERISTICS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage IF = 60 mA VF 1.25 1.65 V Breakdown voltage IR = 10 µA VBR 6.0 V Reverse current VR = 6.0 V IR 0.01 10 µA Capacitance VF = 0 V, f = 1.0 MHz CO 25 pF Thermal resistance Rthja 750 K/W OUTPUT Collector emitter capacitance f = 1.0 mHz, VCE = 5.0 V CCE 6.8 pF Collector base capacitance f = 1.0 mHz, VCB = 5.0 V CCB 8.5 pF Emitter base capacitance f = 1.0 mHz, VEB = 5.0 V CEB 11 pF Thermal resistance Rthja 500 K/W Collector emitter leakage current VCE =10 V SFH601-1 ICEO 2.0 50 nA SFH601-2 ICEO 2.0 50 nA SFH601-3 ICEO 5.0 100 nA SFH601-4 ICEO 5.0 100 nA COUPLER Saturation voltage collector emitter IF = 10 mA, IC = 2.5 mA VCEsat 0.25 0.4 V Capacitance (input to output) VI-O = 0, f = 1.0 MHz CIO 0.6 pF ABSOLUTE MAXIMUM RATINGS (1) PARAMETER TEST CONDITION SYMBOL VALUE UNIT |
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