SFH601-4X007 datasheet(2/10 Pages) VISHAY

Part #	SFH601-4X007

Description	Optocoupler, Phototransistor Output, with Base Connection

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Manufacturer	VISHAY [Vishay Siliconix]

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For technical questions, contact: optocoupler.answers@vishay.com

Document Number: 83663

2

Rev. 1.3, 25-Jan-08

SFH601

Vishay Semiconductors

Optocoupler, Phototransistor Output,

with Base Connection

Notes

(1) Tamb = 25 °C, unless otherwise specified.

Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not

implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum

ratings for extended periods of the time can adversely affect reliability.

(2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through

hole devices (DIP).

Note

Tamb = 25 °C, unless otherwise specified.

Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering

evaluation. Typical values are for information only and are not part of the testing requirements.

OUTPUT

Collector emitter voltage

VCE

100

V

Emitter base voltage

VEBO

7.0

V

Collector current

IC

50

mA

t = 1.0 ms

IC

100

mA

Power dissipation

Pdiss

150

mW

COUPLER

Isolation test voltage between emitter and

detector, referred to climate DIN 40046, part 2,

Nov. 74

t = 1.0 s

VISO

5300

VRMS

Isolation resistance

VIO = 500 V, Tamb = 25 °C

RIO

≥ 1012

Ω

VIO = 500 V, Tamb = 100 °C

RIO

≥ 1011

Ω

Storage temperature range

Tstg

- 55 to + 150

°C

Ambient temperature range

Tamb

- 55 to +100

°C

Junction temperature

Tj

100

°C

Soldering temperature (2)

max. 10 s, dip soldering:

distance to seating plane

≥ 1.5 mm

Tsld

260

°C

ELECTRICAL CHARACTERISTICS

PARAMETER

TEST CONDITION

PART

SYMBOL

MIN.

TYP.

MAX.

UNIT

INPUT

Forward voltage

IF = 60 mA

VF

1.25

1.65

V

Breakdown voltage

IR = 10 µA

VBR

6.0

V

Reverse current

VR = 6.0 V

IR

0.01

10

µA

Capacitance

VF = 0 V, f = 1.0 MHz

CO

25

pF

Thermal resistance

Rthja

750

K/W

OUTPUT

Collector emitter capacitance

f = 1.0 mHz, VCE = 5.0 V

CCE

6.8

pF

Collector base capacitance

f = 1.0 mHz, VCB = 5.0 V

CCB

8.5

pF

Emitter base capacitance

f = 1.0 mHz, VEB = 5.0 V

CEB

11

pF

Thermal resistance

Rthja

500

K/W

Collector emitter leakage current

VCE =10 V

SFH601-1

ICEO

2.0

50

nA

SFH601-2

ICEO

2.0

50

nA

SFH601-3

ICEO

5.0

100

nA

SFH601-4

ICEO

5.0

100

nA

COUPLER

Saturation voltage collector emitter

IF = 10 mA, IC = 2.5 mA

VCEsat

0.25

0.4

V

Capacitance (input to output)

VI-O = 0, f = 1.0 MHz

CIO

0.6

pF

ABSOLUTE MAXIMUM RATINGS (1)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

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