M28F201-70N6R datasheet(4/21 Pages) STMICROELECTRONICS

Part #	M28F201-70N6R

Description	2 Mb 256K x 8, Chip Erase FLASH MEMORY

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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Command

Cycles

1st Cycle

2nd Cycle

Operation

A0-A17

DQ0-DQ7

Operation

A0-A17

DQ0-DQ7

Read

1

Write

X

00h

Electronic

Signature

(2)

2

Write

X

80h or 90h

Read

00000h

20h

Read

00001h

F4h

Setup Erase/

2

Write

X

20h

Erase

Write

X

20h

Erase Verify

2

Write

A0-A17

A0h

Read

X

Data Output

Setup Program/

2

Write

X

40h

Program

Write

A0-A17

Data Input

Program Verify

2

Write

X

C0h

Read

X

Data Output

Reset

2

Write

X

FFh

Write

X

FFh

Notes: 1. X = VIL or VIH.

2. Refer also to the Electronic Signature table.

Table 5. Commands (1)

Standby Mode. In the Standby Mode the maxi-

mum supply current is reduced. The device is

placed in the Standby Mode by applying a High

level to the Chip Enable (E) input. When in the

Standby Mode the outputs are in a high impedance

state, independant of the Output Enable (G) input.

Output Disable Mode. When the Output Enable

(G) is High the outputs are in a high impedance

state.

Electronic Signature Mode. This mode allows the

read out of two binary codes from the device which

identify the manufacturer and device type. This

mode is intended for use by programming equip-

ment to automatically select the correct erase and

programming algorithms. The Electronic Signature

Mode is active when a high voltage (11.5V to 13V)

is applied to address line A9 with E and G Low. With

A0 Low the output data is the manufacturer code,

when A0 is High the output is the device code. All

other address lines should be maintained Low

while reading the codes. The electronic signature

can also be accessed in Read/Write modes.

READ/WRITE MODES, 11.4V

≤ VPP ≤ 12.6V

When VPP is High both read and write operations

may be performed. These are defined by the con-

tents of an internal command register. Commands

may be written to this register to set-up and exe-

cute, Erase, Erase Verify, Program, Program Verify

and Reset modes. Each of these modes needs 2

cycles. Each mode starts with a write operation to

set-up the command, this is followed by either read

or write operations. The device expects the first

cycle to be a write operation and does not corrupt

data at any location in the memory. Read mode is

set-up with one cycle only and may be followed by

any number of read operations to output data.

Electronic Signature Read mode is set-up with one

cycle and followed by a read cycle to output the

manufacturer or device codes.

Awrite to the command register is made by bringing

W Low while E is Low. The falling edge of W latches

Addresses, while the rising edge latches Data,

which are used for those commands that require

address inputs, command input or provide data

output. The supply voltage VCC and the program

voltage VPP can be applied in any order. When the

device is powered up or when VPP is

≤ 6.5V the

contents of the command register defaults to 00h,

thus automatically setting-up Read operations. In

addition a specific command may be used to set

the command register to 00h for reading the mem-

ory. The system designer may chose to provide a

constant high VPP and use the register commands

for all operations, or to switch the VPP from low to

high only when needing to erase or program the

memory. All command register access is inhibited

when VCC falls below the Erase/Write Lockout Volt-

age (VLKO) of 2.5V.

If the device is deselected during Erasure, Pro-

gramming or verifying it will draw active supply

currents until the operations are terminated.

The device is protected against stress caused by

long erase or program times. If the end of Erase or

Programming operations are not terminated by a

Verify cycle within a maximum time permitted, an

internal stop timer automatically stops the opera-

tion. The device remains in an inactive state, ready

to start a Verify or Reset Mode operation.

4/21

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