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M295V160BB70N3T Datasheet(PDF) 3 Page - STMicroelectronics |
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M295V160BB70N3T Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 22 page 3/22 M29F160BT, M29F160BB SUMMARY DESCRIPTION The M29F160B is a 16Mbit (2Mb x8 or 1Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be per- formed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Each block can be protected independently to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are writ- ten to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards. The blocks in the memory are asymmetrically ar- ranged, see Tables 3 and 4, Block Addresses. The first or last 64 Kbytes have been divided into four additional blocks. The 16 Kbyte Boot Block can be used for small initialization code to start the micro- processor, the two 8 Kbyte Parameter Blocks can be used for parameter storage and the remaining 32K is a small Main Block where the application may be stored. Chip Enable, Output Enable and Write Enable sig- nals control the bus operation of the memory. They allow simple connection to most micropro- cessors, often without additional logic. The memory is offered in a TSOP48 (12 x 20mm) package and it is supplied with all the bits erased (set to ’1’). |
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