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M29KDCL3-32T Datasheet(PDF) 11 Page - STMicroelectronics |
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M29KDCL3-32T Datasheet(HTML) 11 Page - STMicroelectronics |
11 / 30 page 11/30 M29KW032E Table 4. Standard Commands Note: X Don’t Care, PA Program Address, PD Program Data, BA Any address in the Block. All values in the table are in hexadecimal. The Command Interface only uses A0-A10 and DQ0-DQ7 to verify the commands; A11-A20, DQ8-DQ15 are Don’t Care. Table 5. Multiple Word Program Command Note: A Bus Read must be done between each Write cycle where the data is programmed or verified, to Read the Status Register and check that the memory is ready to accept the next data. NOT PA1 is any address that is not in the same block as PA1. X Don’t Care, n = number of Words to be programmed. Table 6. Program, Erase Times and Program, Erase Endurance Cycles Note: 1. TA = 25°C, VPP = 12V. Table 7. Multiple Word Program Timings Note: 1. MWP = Multiple Word Program. Command Bus Write Operations 1st 2nd 3rd 4th 5th 6th Add Data Add Data Add Data Add Data Add Data Add Data Read/Reset 1X F0 3 555 AA 2AA 55 X F0 Auto Select 3 555 AA 2AA 55 555 90 Word Program 4 555 AA 2AA 55 555 A0 PA PD Block Erase 6+ 555 AA 2AA 55 555 80 555 AA 2AA 55 BA 30 Chip Erase 6 555 AA 2AA 55 555 80 555 AA 2AA 55 555 10 Phase Bus Write Operations 1st 2nd 3rd 4th 5th Final -1 Final Add Data Add Data Add Data Add Data Add Data Add Data Add Data Program 3+n +1 555 AA 2AA 55 555 20 PA1 PD1 PA1 PD2 PA1 PAn NOT PA1 X Verify n+1 PA1 PD1 PA1 PD2 PA1 PD3 PA1 PD4 PA1 PD5 PA1 PAn NOT PA1 X Parameter Min Typ (1) Typical after 10k W/E Cycles (1) Max Unit Chip Erase 21 25 120 s Block Erase (128 KWords) 1.5 6 s Program (Word) 9 250 µs Chip Program (Multiple Word) 4 35 s Chip Program (Word by Word) 18 35 s Program/Erase Cycles (per Block) 10,000 cycles Symbol Parameter Min Typ Max Unit tMWP-SETUP MWP Setup time 500 ns tMWP-PROG MWP Program Time 9 250 µs tMWP-TRAN MWP Program to Verify transition 2 10 20 µs tMWP-END MWP Verify to End transition 2 3 µs |
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