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M28010-10RBA6T Datasheet(PDF) 8 Page - STMicroelectronics

Part # M28010-10RBA6T
Description  1 Mbit 128K x 8 Parallel EEPROM With Software Data Protection
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M28010-10RBA6T Datasheet(HTML) 8 Page - STMicroelectronics

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M28010
8/23
Software Chip Erase
The device can be erased (with all bytes set to
FFh) by using a six-byte software command code.
This operation can be initiated only if the user
loads, with a Page Write addressing mode, six
specific data bytes to six specific locations (as
shown in Figure 6). The complexity of the
sequence has been designed to guard against
inadvertent use of the command.
Status Bits
The devices provide five status bits (DQ7, DQ6,
DQ5, DQ1 and DQ0) for use during write
operations. These allow the application to use the
write time latency of the device for getting on with
other work. These signals are available on the I/O
port bits DQ7, DQ6, DQ5, DQ1 and DQ0 (but only
during the internal write cycle, tQ5HQ5X).
Data Polling bit (DQ7). The internally timed write
cycle starts as soon as tWLQ5H (defined in Table
9A to Table 9C) has elapsed since the previous
byte was latched in to the memory. The value of
the DQ7 bit of this last byte, is used as a signal
throughout this write operation: it is inverted while
the internal write operation is underway, and is
inverted back to its original value once the
operation is complete.
Toggle bit (DQ6). The device offers another way
for determining when the internal write cycle is
running. During the internal write cycle, DQ6
toggles from ’0’ to ’1’ and ’1’ to ’0’ (the first read
value being ’0’) on subsequent attempts to read
any byte of the memory. When the internal write
cycle is complete, the toggling is stopped, and the
values read on DQ7-DQ0 are those of the
addressed memory byte. This indicates that the
device is again available for new Read and Write
operations.
Page Load Timer Status bit (DQ5). An internal
timer is used to measure the period between
successive
Write operations,
up
to
tWLQ5H
(defined in Table 9A to Table 9C). The DQ5 line is
held low to show when this timer is running (hence
showing that the device has received one write
operation, and is waiting for the next). The DQ5
line is held high when the counter has overflowed
(hence showing that the device is now starting the
internal write to the memory array).
Page Write Abort bit (DQ1). During a page write
operation, the A16 to A7 signals should be kept
constant.
They
should
not
change
while
successive data bytes are being transferred to the
internal latches of the memory device. If a change
occurs on any of the pins, A16 to A7, during the
page write operation (that is, before the falling
edge of W or E, which ever occurs later), the
internal write cycle is not started, and the internal
circuitry is completely reset.
The abort signal can be observed on the DQ1 pin,
using a normal read operation. This can be
performed at any time during the byte load cycle,
tWLQ5H, or while the W input is being held high
between two load cycles. The default value of DQ1
is initially set to ’0’ and changes to ’1’ if the internal
circuitry has detected a change on any of the
address pins A16 to A7. This PWA bit can be
checked regardless of whether Software Data
Protection is enabled or disabled.
Table 5A. Read Mode DC Characteristics for M28010 (5V range)
(TA = –40 to 85 °C; VCC = 4.5 to 5.5 V)
Note: 1. All inputs and outputs open circuit.
Symbol
Parameter
Test Condition
Min.
Max.
Unit
ILI
Input Leakage Current
0V
≤ VIN ≤ VCC
5
µA
ILO
Output Leakage Current
0 V
≤ VOUT ≤ VCC
5
µA
ICC 1
Supply Current (CMOS inputs)
E= VIL,G = VIL, f = 0.1 MHz
2mA
E= VIL,G = VIL, f = 5 MHz
22
mA
E=VIL,G= VIL, f = 10 MHz
40
mA
ICC1
1
Supply Current (Stand-by) CMOS
E > VCC –0.3 V
50
µA
VIL
Input Low Voltage
–0.3
0.8
V
VIH
Input High Voltage
2
VCC + 0.3
V
VOL
Output Low Voltage
IOL = 2.1 mA
0.4
V
VOH
Output High Voltage
IOH = –400 µA
2.4
V


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