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M28C17-30NS6 Datasheet(PDF) 9 Page - STMicroelectronics |
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M28C17-30NS6 Datasheet(HTML) 9 Page - STMicroelectronics |
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9 / 19 page  Symbol Alt Parameter Test Condition Min Max Unit tAVWL tAS Address Valid to Write Enable Low E = VIL,G= VIH 0ns tAVEL tAS Address Valid to Chip Enable Low G = VIH,W = VIL 0ns tELWL tCES Chip Enable Low to Write Enable Low G = VIH 0ns tGHWL tOES Output Enable High to Write Enable Low E=VIL 0ns tGHEL tOES Output Enable High to Chip Enable Low W = VIL 0ns tWLEL tWES Write Enable Low to Chip Enable Low G = VIH 0ns tWLAX tAH Write Enable Low to Address Transition 100 ns tELAX tAH Chip Enable Low to Address Transition 100 ns tWLDV tDV Write Enable Low to Input Valid E = VIL,G= VIH 1 µs tELDV tDV Chip Enable Low to Input Valid G = VIH,W = VIL 1 µs tELEH tWP Chip Enable Low to Chip Enable High 100 ns tWHEH tCEH Write Enable High to Chip Enable High 0 ns tWHGL tOEH Write Enable High to Output Enable Low 0ns tEHGL tOEH Chip Enable High to Output Enable Low 0 ns tEHWH tWEH Chip Enable High to Write Enable High 0 ns tWHDX tDH Write Enable High to Input Transition 0 ns tEHDX tDH Chip Enable High to Input Transition 0 ns tWHWL tWPH Write Enable High to Write Enable Low 200 ns tWLWH tWP Write Enable Low to Write Enable High 100 ns tWHWH tBLC Byte Load Repeat Cycle Time 0.2 30 µs tWHRH tWC Write Cycle Time 5 ms tWHRL tDB Write Enable High to Ready/Busy Low Note 1 100 ns tEHRL tDB Chip Enable High to Ready/Busy Low Note 1 100 ns tDVWH tDS Data Valid before Write Enable High 50 ns tDVEH tDS Data Valid before Chip Enable High 50 ns Note: 1. With a 3.3 k Ω external pull-up resistor. Table 12. Write Mode AC Characteristics for M28C16A and M28C17A (TA = –40 to 85 °C, VCC = 4.5V to 5.5V) 9/19 M28C16A, M28C17A |
Similar Part No. - M28C17-30NS6 |
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Similar Description - M28C17-30NS6 |
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