M28F201-90N1TR datasheet(6/21 Pages) STMICROELECTRONICS

Part #	M28F201-90N1TR

Description	2 Mb 256K x 8, Chip Erase FLASH MEMORY

Download	21 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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6 / 21 page

Symbol

Parameter

Test Condition

Min

Max

Unit

ILI

Input Leakage Current

0V

≤ VIN ≤ VCC

±1

µA

ILO

Output Leakage Current

0V

≤ VOUT ≤ VCC

±10

µA

ICC

Supply Current (Read)

E = VIL, f = 10MHz

30

mA

ICC1

Supply Current (Standby) TTL

E = VIH

1mA

Supply Current (Standby) CMOS

E = VCC

± 0.2V

100

µA

ICC2

(1 )

Supply Current (Programming)

During Programming

10

mA

ICC3

(1)

Supply Current (Program Verify)

During Verify

20

mA

ICC4

(1)

Supply Current (Erase)

During Erasure

20

mA

ICC5

(1 )

Supply Current (Erase Verify)

During Erase Verify)

20

mA

ILPP

Program Leakage Current

VPP

≤ VCC

±10

µA

IPP

Program Current (Read or

Standby)

VPP >VCC

200

µA

VPP

≤ VCC

±10

µA

IPP1

(1)

Program Current (Programming)

VPP =VPPH, During Programming

30

mA

IPP2

(1)

Program Current (Program

Verify)

VPP =VPPH, During Verify

5

mA

IPP3

(1)

Program Current (Erase)

VPP =VPPH, During Erase

30

mA

IPP4

(1)

Program Current (Erase Verify)

VPP =VPPH, During Erase Verify

5

mA

VIL

Input Low Voltage

–0.5

0.8

V

VIH

Input High Voltage TTL

2

VCC + 0.5

V

Input High Voltage CMOS

0.7 VCC

VCC + 0.5

V

VOL

Output Low Voltage

IOL = 5.8mA

0.45

V

VOH

Output High Voltage CMOS

IOH = –100

µAVCC – 0.4

V

IOH = –2.5mA

0.85 VCC

V

Output High Voltage TTL

IOH = –2.5mA

2.4

V

VPPL

Program Voltage (Read

Operations)

0

6.5

V

VPPH

Program Voltage (Read/Write

Operations)

11.4

12.6

V

VID

A9 Voltage (Electronic Signature)

11.5

13

V

IID

(1)

A9 Current (Electronic Signature)

A9 = VID

200

µA

VLKO

Supply Voltage, Erase/Program

Lock-out

2.5

V

Note: 1. Not 100% tested. Characterisation Data available.

Table 8. DC Characteristics

(TA = 0 to 70

°C, –40 to 85 °C or –40 to 125 °C; VCC =5V ± 10%)

6/21

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