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M29W102 Datasheet(PDF) 1 Page - STMicroelectronics |
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M29W102 Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 20 page 1/20 March 2000 M29W102BT M29W102BB 1 Mbit (64Kb x16, Boot Block) Low Voltage Single Supply Flash Memory s SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS s ACCESS TIME: 50ns s PROGRAMMING TIME – 10µs per Word typical s 5 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter and 2 Main Blocks s PROGRAM/ERASE CONTROLLER – Embedded Word Program algorithm – Embedded Multi-Block/Chip Erase algorithm – Status Register Polling and Toggle Bits s ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend s UNLOCK BYPASS PROGRAM COMMAND – Faster Production/Batch Programming s TEMPORARY BLOCK UNPROTECTION MODE s LOW POWER CONSUMPTION – Standby and Automatic Standby s 100,000 PROGRAM/ERASE CYCLES per BLOCK s M28F102 COMPATIBLE – Pin-out and Read Mode s 20 YEARS DATA RETENTION – Defectivity below 1 ppm/year s ELECTRONIC SIGNATURE – Manufacturer Code: 0020h – Top Device Code M29W102BT: 0099h – Bottom Device Code M29W102BB: 0098h TSOP40 (N) 10 x 14mm Figure 1. Logic Diagram AI02785 16 A0-A15 W DQ0-DQ15 VCC M29W102BT M29W102BB E VSS 16 G RP |
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