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M28F201-70XN1TR Datasheet(PDF) 4 Page - STMicroelectronics |
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M28F201-70XN1TR Datasheet(HTML) 4 Page - STMicroelectronics |
4 / 21 page Command Cycles 1st Cycle 2nd Cycle Operation A0-A17 DQ0-DQ7 Operation A0-A17 DQ0-DQ7 Read 1 Write X 00h Electronic Signature (2) 2 Write X 80h or 90h Read 00000h 20h Read 00001h F4h Setup Erase/ 2 Write X 20h Erase Write X 20h Erase Verify 2 Write A0-A17 A0h Read X Data Output Setup Program/ 2 Write X 40h Program Write A0-A17 Data Input Program Verify 2 Write X C0h Read X Data Output Reset 2 Write X FFh Write X FFh Notes: 1. X = VIL or VIH. 2. Refer also to the Electronic Signature table. Table 5. Commands (1) Standby Mode. In the Standby Mode the maxi- mum supply current is reduced. The device is placed in the Standby Mode by applying a High level to the Chip Enable (E) input. When in the Standby Mode the outputs are in a high impedance state, independant of the Output Enable (G) input. Output Disable Mode. When the Output Enable (G) is High the outputs are in a high impedance state. Electronic Signature Mode. This mode allows the read out of two binary codes from the device which identify the manufacturer and device type. This mode is intended for use by programming equip- ment to automatically select the correct erase and programming algorithms. The Electronic Signature Mode is active when a high voltage (11.5V to 13V) is applied to address line A9 with E and G Low. With A0 Low the output data is the manufacturer code, when A0 is High the output is the device code. All other address lines should be maintained Low while reading the codes. The electronic signature can also be accessed in Read/Write modes. READ/WRITE MODES, 11.4V ≤ VPP ≤ 12.6V When VPP is High both read and write operations may be performed. These are defined by the con- tents of an internal command register. Commands may be written to this register to set-up and exe- cute, Erase, Erase Verify, Program, Program Verify and Reset modes. Each of these modes needs 2 cycles. Each mode starts with a write operation to set-up the command, this is followed by either read or write operations. The device expects the first cycle to be a write operation and does not corrupt data at any location in the memory. Read mode is set-up with one cycle only and may be followed by any number of read operations to output data. Electronic Signature Read mode is set-up with one cycle and followed by a read cycle to output the manufacturer or device codes. Awrite to the command register is made by bringing W Low while E is Low. The falling edge of W latches Addresses, while the rising edge latches Data, which are used for those commands that require address inputs, command input or provide data output. The supply voltage VCC and the program voltage VPP can be applied in any order. When the device is powered up or when VPP is ≤ 6.5V the contents of the command register defaults to 00h, thus automatically setting-up Read operations. In addition a specific command may be used to set the command register to 00h for reading the mem- ory. The system designer may chose to provide a constant high VPP and use the register commands for all operations, or to switch the VPP from low to high only when needing to erase or program the memory. All command register access is inhibited when VCC falls below the Erase/Write Lockout Volt- age (VLKO) of 2.5V. If the device is deselected during Erasure, Pro- gramming or verifying it will draw active supply currents until the operations are terminated. The device is protected against stress caused by long erase or program times. If the end of Erase or Programming operations are not terminated by a Verify cycle within a maximum time permitted, an internal stop timer automatically stops the opera- tion. The device remains in an inactive state, ready to start a Verify or Reset Mode operation. 4/21 M28F201 |
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